Tribological properties of MgO-CaO-SiO2-P2O5-F-based glass-ceramic for dental applications

Park, Jongee
Öztürk, Abdullah
Microhardness and tribological behavior of a glass-ceramic produced from a glass in the MgO-CaO-SiO2-P2O5-F system have been investigated with regard to the phases formed and microstructure developed during crystallization. The results of X-ray diffraction analysis indicated that apatite and wollastonite are the predominant crystalline phases. Scanning electron microscopy examination revealed that the wollastonite crystal content decreases and apatite crystal content increases as the depth distance from the surface increases. Structure oriented changes in properties were evidenced. The indentation microhardness at the free surface was 650 +/- 12 H-V. However, it decreased gradually with increasing depth distance from the free surface and attained 520 +/- 8 H-V at a distance of 0.5 mm below the free surface. The wear rate at the free surface was 0.7 +/- 0.05 x 10(-4) mm(3)/Nm, but increased gradually as the distance from the free surface increased. The wear rate reached 2.9 +/- 0.15 x 10(-4) mm(3)/Nm at a distance of 0.5 mm below the free surface.


Transient and steady state photoelectronic analysis in TlInSe2 crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-08-01)
The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. Th...
Thermally stimulated currents in n-InS single crystals
Hasanlı, Nızamı; Yuksek, NS (Elsevier BV, 2003-03-24)
Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry
Isik, M.; Delice, S.; Nasser, H.; Hasanlı, Nızamı; Darvishov, N. H.; Bagiev, V. E. (Elsevier BV, 2020-12-01)
Structural and optical characteristics of Bi12SiO20 single crystal grown by the Czochralski method were investigated by virtue of X-ray diffraction (XRD) and spectroscopic ellipsometry measurements. XRD analysis indicated that the studied crystal possesses cubic structure with lattice parameters of a = 1.0107 nm. Spectral dependencies of several optical parameters like complex dielectric constant, refractive index, extinction and absorption coefficients were determined using ellipsometry experiments perform...
Hydrothermal BaTiO3 thin films from nanostructured Ti templates
Akyildiz, Hasan; Casper, Michelle D.; Ayguen, Seymen M.; Lam, Peter G.; Maria, Jon P. (Cambridge University Press (CUP), 2011-02-01)
Polycrystalline BaTiO3 thin films have been prepared by hydrothermal reaction with sputter-deposited nanostructured reactive Ti templates designed to control net diffusion direction and distance. Templates were prepared in two morphologies, i.e., planar and nanopillar. The samples produced from flat templates showed sluggish transformation kinetics and an eventual termination of reaction without fully consuming the Ti metal. Templates with pillar morphology, on the other hand, could be transformed to phase-...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Citation Formats
J. Park and A. Öztürk, “Tribological properties of MgO-CaO-SiO2-P2O5-F-based glass-ceramic for dental applications,” MATERIALS LETTERS, pp. 1916–1921, 2007, Accessed: 00, 2020. [Online]. Available: