Large format AlInAs-InGaAs quantum-well infrared photodetector focal plane array for midwavelength infrared thermal imaging

Date

2007-09-01

Author

Ozer, S.
Tümkaya, Umman
Beşikci, Cengiz

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We report the first large format (640 x 512) AlInAs-InGaAs quantum-well infrared photodetector (QWIP) focal plane array (FPA), and investigate the characteristics of AlInAs-InGaAs QWIPs both at pixel and FPA level. The measurements on the detectors fabricated with molecular beam epitaxy grown epilayer structure including 30 InGaAs quantum wells (26 A thick, N-D = 2 x 10(18) cm(-3)) yielded very promising characteristics. The detectors with lambda(p) = 4.2 mu m and Delta lambda/lambda(p) = 25% displayed a background-limited performance temperature as high as 105 K with f/2 aperture. The noise equivalent temperature difference of the FPA is as low as 23 mK (f/1.5) at 105-K sensor temperature with 99.6% operability. These results are comparable to the best results reported for AlGaAs-InGaAs midwavelength infrared QWIPs showing the promise of this material system for completely lattice-matched multiband QWIP FPAs.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/38822

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

DOI

https://doi.org/10.1109/lpt.2007.903338

Collections

Department of Basic English, Article

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Citation Formats

S. Ozer, U. Tümkaya, and C. Beşikci, “Large format AlInAs-InGaAs quantum-well infrared photodetector focal plane array for midwavelength infrared thermal imaging,” IEEE PHOTONICS TECHNOLOGY LETTERS, pp. 1371–1373, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38822.