Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds

Isik, M.
Guler, I
Hasanlı, Nızamı
Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.


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Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
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QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-08-01)
The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. Th...
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Polycrystalline BaTiO3 thin films have been prepared by hydrothermal reaction with sputter-deposited nanostructured reactive Ti templates designed to control net diffusion direction and distance. Templates were prepared in two morphologies, i.e., planar and nanopillar. The samples produced from flat templates showed sluggish transformation kinetics and an eventual termination of reaction without fully consuming the Ti metal. Templates with pillar morphology, on the other hand, could be transformed to phase-...
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Citation Formats
M. Isik, I. Guler, and N. Hasanlı, “Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: