A method and electrical model for the anodic bonding of SOI and glass wafers

Date

2012-02-02

Author

Tatar, E.
Torunbalci, M.M.
Alper, S.E.
Akın, Tayfun

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This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bonding mechanism with an electrical model, for the first time in the literature. SOI-glass anodic bonding can be achieved at voltages as low as 250V similar to Si-glass anodic bonding, and the underlying principles can be understood by modeling the overall system with a series-connected capacitor-resistor network. The SOI-oxide layer can be added as a capacitor to the classical anodic bonding model, and the behavior of the bonding can be estimated with the basic circuit theory. The oxide capacitance in the model acts as a short circuit at the time instant when the bonding potential is applied, and then it gradually becomes an open circuit. The model is also successfully adapted to triple stack glass-Si-glass anodic bonding, which enables wafer level packaging and offers many opportunities to MEMS designers.

Subject Keywords

Bonding, Silicon, Integrated circuit modeling, Capacitance, Electric potential , Semiconductor device modeling , Glass

URI

https://hdl.handle.net/11511/40538

DOI

https://doi.org/10.1109/memsys.2012.6170095

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

E. Tatar, M. M. Torunbalci, S. E. Alper, and T. Akın, “A method and electrical model for the anodic bonding of SOI and glass wafers,” 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40538.