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A method and electrical model for the anodic bonding of SOI and glass wafers
Date
2012-02-02
Author
Tatar, E.
Torunbalci, M.M.
Alper, S.E.
Akın, Tayfun
Metadata
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bonding mechanism with an electrical model, for the first time in the literature. SOI-glass anodic bonding can be achieved at voltages as low as 250V similar to Si-glass anodic bonding, and the underlying principles can be understood by modeling the overall system with a series-connected capacitor-resistor network. The SOI-oxide layer can be added as a capacitor to the classical anodic bonding model, and the behavior of the bonding can be estimated with the basic circuit theory. The oxide capacitance in the model acts as a short circuit at the time instant when the bonding potential is applied, and then it gradually becomes an open circuit. The model is also successfully adapted to triple stack glass-Si-glass anodic bonding, which enables wafer level packaging and offers many opportunities to MEMS designers.
Subject Keywords
Bonding
,
Silicon
,
Integrated circuit modeling
,
Capacitance
,
Electric potential
,
Semiconductor device modeling
,
Glass
URI
https://hdl.handle.net/11511/40538
DOI
https://doi.org/10.1109/memsys.2012.6170095
Collections
Department of Electrical and Electronics Engineering, Conference / Seminar
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E. Tatar, M. M. Torunbalci, S. E. Alper, and T. Akın, “A method and electrical model for the anodic bonding of SOI and glass wafers,” 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40538.