Comparison of Two Alternative Silicon-On-Glass Microfabrication Processes for MEMS Inertial Sensors

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10.1016.j.proeng.2011.12.221.pdf

Date

2011-09-07

Author

Torunbalci, M. M.
Tatar, E.
Alper, S. E.
Akın, Tayfun

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This paper presents experimental comparison of a modified silicon-on-glass (M-SOG) process to a previously-reported classical SOG (C-SOG) process based on the use of SOI wafers, yielding a stress free < 111 > silicon structural layer with desired structure thickness. The basic difference between these processes is the sequence of the step at which the silicon microstructures are defined by DRIE, making M-SOG more robust against critical dimension (CD) variations. Overall, M-SOG provides a simple, high yield, reliable, and robust solution for producing high performance MEMS inertial sensors, and these advantages are experimentally verified over C-SOG, both completed by following the identical process parameters and by using the same mask set.

Subject Keywords

Silicon-On-Glass (SOG) process, MEMS inertial sensors

URI

https://hdl.handle.net/11511/43694

DOI

https://doi.org/10.1016/j.proeng.2011.12.221

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

M. M. Torunbalci, E. Tatar, S. E. Alper, and T. Akın, “Comparison of Two Alternative Silicon-On-Glass Microfabrication Processes for MEMS Inertial Sensors,” 2011, vol. 25, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43694.