Temperature dependence of electrical properties in Cu0.5Ag0.5InSe2/Si heterostructure

Gullu, H. H.
Parlak, Mehmet
The polycrystalline Cu0.5Ag0.5InSe2 thin film was deposited on mono-crystalline n-Si wafer by sequential thermal evaporation of elemental sources. p-Cu0.5Ag0.5InSe2/n-Si heterojunction diode was fabricated and the current-voltage characteristics of the diode at various temperatures were investigated to determine the main diode parameters and dark current transport mechanism. The studied diode structure showed a rectifying behavior with a barrier height of 0.63 eV at room temperature. Series and shunt resistance values were calculated by parasitic resistance relations in high bias regions. Considering the ideality factor values between 1.7 and 2.8, dominant transport characteristics were detailed for forward and reverse voltages. The analysis of the forward current-voltage behavior reveals field emission can be the possible current conduction mechanism. At the reverse bias region, around 10(1) number of tunneling step and about 10(5) density of traps were found to act a role in the process in leakage current flow.


Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-04-01)
In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature ri...
Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode
Gullu, H. H.; Isik, M.; Delice, S.; Parlak, Mehmet; Hasanlı, Nızamı (Springer Science and Business Media LLC, 2020-01-01)
Cu0.5Ag0.5InSe2 (CAIS) thin films were deposited on a glass substrate by sequential sputtering of Cu, Ag, and In2Se3-stacked film layers. Structural characterization showed that the deposited CAIS film satisfies nearly the stoichiometric form with uniform and homogeneous surface structure. The single-phase polycrystalline behavior without any secondary-phase formation was observed from the diffraction profile. The optical properties were investigated using temperature-dependent transmission measurements in ...
Deposition of AgGaS2 thin films by double source thermal evaporation technique
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Springer Science and Business Media LLC, 2011-09-01)
In this study, polycrystalline AgGaS2 thin films were deposited by the sequential evaporation of AgGaS2 and Ag sources with thermal evaporation technique. Thermal treatment in nitrogen atmosphere for 5 min up to 700 A degrees C was applied to the deposited thin films and that resulted in the mono phase AgGaS2 thin films without the participation of any other minor phase. Structural and compositional analyses showed the structure of the films completely changes with annealing process. The measurements of tra...
Investigations of thermal annealing role on the optical properties of Zn-In-Se thin films
Gullu, H. H.; COŞKUN, EMRE; Parlak, Mehmet (Elsevier BV, 2017-01-01)
Zn-In-Se (ZIS) thin films were prepared by sequential evaporation of its elemental sources on the glass substrates. The effect of thermal annealing under nitrogen environment on the optical properties of the films was discussed. In addition to the comparative study of three different annealing temperatures, the results were analyzed by relating with their structural and compositional characteristics. The optical analyses were based on the observed interference fringes on their transmission spectra of the fi...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Citation Formats
H. H. Gullu and M. Parlak, “Temperature dependence of electrical properties in Cu0.5Ag0.5InSe2/Si heterostructure,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 11258–11264, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36319.