Pressure dependence of the raman spectra of cdinals4 layer crystal

1994-01-01

Suggestions

Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2008-01-01)
The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of...
Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode
ANUTGAN, MUSTAFA; ANUTGAN, TAMİLA; ATILGAN, İSMAİL; Katircioglu, B. (Informa UK Limited, 2013-08-01)
Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and...
Mass-flux and shock calculations through cryogenic homogeneous two-phase nozzle flow
Akmandor, IS; Nagashima, T (American Institute of Aeronautics and Astronautics (AIAA), 2000-07-01)
Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements
Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01)
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
Low-temperature thermoluminescence study of GaSe: Mn layered single crystals
Delice, S.; Hasanlı, Nızamı (Informa UK Limited, 2016-01-12)
Mangan doped GaSe single crystals have been studied by thermoluminescence measurements performed with various heating rates between 0.4 and 1.0 K/s in the temperature range of 10-300 K. Thermoluminescence spectra exhibited four distinguishable peaks having maximum temperatures at 47, 102, 139 and 191 K revealing the existence of trapping levels in the crystals. Curve fitting and initial rise methods were applied to observed peaks to determine the activation energies of four trapping levels. Capture cross-se...
Citation Formats
N. Hasanlı and B. G. Akınoğlu, “Pressure dependence of the raman spectra of cdinals4 layer crystal,” High Pressure Research, pp. 115–120, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41686.