Decomposition of CH4 on S-A type stepped Si(100) surface

Date

2002-06-30

Author

Katırcıoğlu, Şenay

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Density functional theory method is used to explore the mechanism of dissociative adsorption of methane (CH4) on SA type stepped Si(100) surface. Two reaction paths are described that produce CH3 and hydrogen atom fragments adsorbed on the dimer bonds present on each terraces. It has been found that, in the initial stage of the carbonization of stepped Si(100) surface, the CH3 and H fragments bound to the Si dimer atoms by following the first reaction path.

Subject Keywords

CH4, Methane, Hydocarbons, Buffer layer, Carbonization, Decomposition, Stepped Si(100) surface, Density functional theory

URI

https://hdl.handle.net/11511/41719

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

DOI

https://doi.org/10.1142/s0217979202011238

Collections

Department of Physics, Article

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Citation Formats

Ş. Katırcıoğlu, “Decomposition of CH4 on S-A type stepped Si(100) surface,” INTERNATIONAL JOURNAL OF MODERN PHYSICS B, pp. 2191–2200, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41719.