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Decomposition of CH4 on S-A type stepped Si(100) surface
Date
2002-06-30
Author
Katırcıoğlu, Şenay
Metadata
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Density functional theory method is used to explore the mechanism of dissociative adsorption of methane (CH4) on SA type stepped Si(100) surface. Two reaction paths are described that produce CH3 and hydrogen atom fragments adsorbed on the dimer bonds present on each terraces. It has been found that, in the initial stage of the carbonization of stepped Si(100) surface, the CH3 and H fragments bound to the Si dimer atoms by following the first reaction path.
Subject Keywords
CH4
,
Methane
,
Hydocarbons
,
Buffer layer
,
Carbonization
,
Decomposition
,
Stepped Si(100) surface
,
Density functional theory
URI
https://hdl.handle.net/11511/41719
Journal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
DOI
https://doi.org/10.1142/s0217979202011238
Collections
Department of Physics, Article
Citation Formats
IEEE
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BibTeX
Ş. Katırcıoğlu, “Decomposition of CH4 on S-A type stepped Si(100) surface,”
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, vol. 16, no. 16, pp. 2191–2200, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41719.