Transmission, reflection and thermoluminescence studies on GaS0.75Se0.25 layered single crystals

Date

2015-10-01

Author

Delice, S.
IŞIK, MEHMET
Hasanlı, Nızamı

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Optical and thermoluminescence properties on GaS0.75Se0.25 crystals were investigated in the present work. Transmission and reflection measurements were performed at room temperature in the wavelength range of 400-1000 nm. Analysis revealed the presence of indirect and direct transitions with band gap energies of 2.39 and 2.53 eV, respectively. TL spectra obtained at low temperatures (10-300 K) exhibited one peak having maximum temperature of 168 K. Observed peak was analyzed using curve fitting, initial rise and peak shape methods to calculate the activation energy of the associated trap center. All applied methods were consistent with the value of 495 meV. Attempt-to-escape-frequency and capture cross section of the trap center were determined using the results of curve fitting. Heating rate dependence studies of the glow curve in the range of 0.4-0.8 K/s resulted with decrease of TL intensity and shift of the peak maximum temperature to higher values.

Subject Keywords

Chalcogenides, Optical Properties, Luminescence, Defects

URI

https://hdl.handle.net/11511/42710

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/j.materresbull.2015.04.037

Collections

Department of Physics, Article

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Citation Formats

S. Delice, M. IŞIK, and N. Hasanlı, “Transmission, reflection and thermoluminescence studies on GaS0.75Se0.25 layered single crystals,” MATERIALS RESEARCH BULLETIN, pp. 236–240, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42710.