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Trap distribution in AgIn5S8 single crystals: Thermoluminescence study
Date
2018-03-01
Author
Delice, S.
IŞIK, MEHMET
Hasanlı, Nızamı
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Distribution of shallow trap levels in AgIn5S8 crystals has been investigated by thermoluminescence (TL) measurements performed below room temperature (10-300 K). One broad TL peak centered at 33 K was observed as constant heating rate of 0.2 K/s was employed for measurement. The peak shape analysis showed that the TL curve could consist of several individual overlapping TL peaks or existence of quasi-continuous distributed traps. Therefore, TL experiments were repeated for different stopping temperatures (T-stop) between 10 and 34 K with constant heating rate of 0.2 K/s to separate the overlapping TL peaks. The E-t vs T-stop indicated that crystal has quasi-continuously distributed traps having activation energies increasing from 13 to 41 meV. Heating rate effect on trapped charge carriers was also investigated by carrying out the TL. experiments with various heating rates between 0.2 and 0.6 K/s for better comprehension of characteristics of existed trap levels. Analyses indicated that the trap levels exhibited the properties of anomalous heating rate behavior which means the TL intensity and area under the TL peak increase with increasing heating rate.
Subject Keywords
Chalcogenides
,
Defects
,
Luminescence
URI
https://hdl.handle.net/11511/43130
Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
DOI
https://doi.org/10.1016/j.jpcs.2017.11.011
Collections
Department of Physics, Article