Katırcıoğlu, Şenay
The ground-state total electronic energy of the Buckminsterfullerene (BF) and truncated dodecahedron (TD) models of C60 has been calculated using the empirical tight-binding (ETB) method. it was found that the BF model was energetically more stable than the TD model Of C60.


Temperature dependence of magnetic and thermal properties of chiral HyFe and HyMn close to phase transitions by using the Landau mean field model
Tari, Ozlem; Yurtseven, Hasan Hamit (Elsevier BV, 2019-04-15)
Magnetic and thermal properties of chiral metal formate frameworks (MOFs) of NH2NH3M(HCOO)(3), M = Fe, Mn, namely, HyFe and HyMn are investigated close to phase transitions by using Landau phenomenological model. By expanding the free energy in terms of the order parameter, for magnetic properties the temperature dependence of magnetization and inverse magnetic susceptibility, and for thermal properties the heat capacity and entropy are calculated for chiral HyFe and HyMn close to phase transitions using th...
Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-04-18)
Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was obs...
Atomic and electronic structure of Bi/GaAs(001)-alpha 2(2x4)
Usanmaz, D.; ÇAKMAK, MELEK; Ellialtıoğlu, Süleyman Şinasi (IOP Publishing, 2008-07-02)
We report an ab initio pseudopotential calculation for the atomic and electronic structure of Bi/GaAs(001)-alpha 2(2 x 4). Three structural models with Bi coverages of Theta = 1/4 are considered, containing one Bi dimer or two Bi-As mixed dimers. According to our calculations for this coverage, the atomic model of the Bi/GaAs(001)-(2 x 4) reconstruction is similar to the alpha 2 structure of the clean GaAs(001)-(2 x 4) surface in which the top As dimer is replaced by a Bi dimer. This result is in agreement ...
Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2017-04-01)
Transmission and reflection measurements on GaSxSe1-x mixed crystals (0 <= x <= 1) were carried out in the 400-1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive i...
Analysis of the Hall effect in TlGaTe2 single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (IOP Publishing, 2009-06-10)
The electrical resistivity and Hall coefficient of p-type TlGaTe2 crystals were measured in the temperature range of 110-320 K. The electrical resistivity, charge carrier density and Hall mobility data for the crystals have been analyzed by means of existing theories and models to determine the extrinsic energy levels, the carrier effective mass, the donor and acceptor concentrations and the dominant scattering mechanism in the crystal as well. The analysis of the temperature-dependent electrical resistivit...
Citation Formats
Ş. Katırcıoğlu and T. HALICIOGLU, “ELECTRONIC-ENERGY CALCULATION OF C-60 CLUSTERS,” MATERIALS CHEMISTRY AND PHYSICS, pp. 78–80, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45659.