Atomic and electronic structure of Bi/GaAs(001)-alpha 2(2x4)

Date

2008-07-02

Author

Usanmaz, D.
ÇAKMAK, MELEK
Ellialtıoğlu, Süleyman Şinasi

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We report an ab initio pseudopotential calculation for the atomic and electronic structure of Bi/GaAs(001)-alpha 2(2 x 4). Three structural models with Bi coverages of Theta = 1/4 are considered, containing one Bi dimer or two Bi-As mixed dimers. According to our calculations for this coverage, the atomic model of the Bi/GaAs(001)-(2 x 4) reconstruction is similar to the alpha 2 structure of the clean GaAs(001)-(2 x 4) surface in which the top As dimer is replaced by a Bi dimer. This result is in agreement with the most recent scanning tunneling microscopy work.

Subject Keywords

General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/57831

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER

DOI

https://doi.org/10.1088/0953-8984/20/26/265003

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

D. Usanmaz, M. ÇAKMAK, and S. Ş. Ellialtıoğlu, “Atomic and electronic structure of Bi/GaAs(001)-alpha 2(2x4),” JOURNAL OF PHYSICS-CONDENSED MATTER, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57831.