Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

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2012-07-01

Author

Aydemir, A.
Akın, Tayfun

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In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures.

Subject Keywords

Mechanical Engineering, Electrical and Electronic Engineering, Mechanics of Materials, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/46227

Journal

JOURNAL OF MICROMECHANICS AND MICROENGINEERING

DOI

https://doi.org/10.1088/0960-1317/22/7/074004

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

A. Aydemir and T. Akın, “Prevention of sidewall redeposition of etched byproducts in the dry Au etch process,” JOURNAL OF MICROMECHANICS AND MICROENGINEERING, pp. 0–0, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46227.