Defect luminescence in undoped p-type GaSe

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2001-12-01

Author

Aydinli, A
Hasanlı, Nızamı
Goksen, K

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Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/47436

Journal

PHILOSOPHICAL MAGAZINE LETTERS

DOI

https://doi.org/10.1080/09500830110093885

Collections

Department of Physics, Article

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Citation Formats

A. Aydinli, N. Hasanlı, and K. Goksen, “Defect luminescence in undoped p-type GaSe,” PHILOSOPHICAL MAGAZINE LETTERS, pp. 859–867, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47436.