Influence of mutual drag of the carrier-phonon system on the thermopower and transverse Nernst-Ettingshausen effect

Download

index.pdf

Date

2003-03-15

Author

Babaev, MM
Gassym, TM
Tas, M
Tomak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

174
views

75
downloads

The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags. The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms. It is shown that in weak and high transverse magnetic fields, the electronic and phonon parts of the NE coefficients change their sign for some scattering mechanisms.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/47317

Journal

PHYSICAL REVIEW B

DOI

https://doi.org/10.1103/physrevb.67.115329

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01) Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Optoelectronic properties of Tl3InSe4 single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01) The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Calculation of the free energies for the solid phases of ammonium halides Salihoglu, S.; Yurtseven, Hasan Hamit; Karacali, H. (Informa UK Limited, 2007-01-01) Using mean field theory, we calculate the free energies of the solid phases of ammonium halides. The temperature and pressure dependences of the free energies are obtained using experimental phase diagrams of the ammonium halides. From these dependences, we calculate numerically the specific heat as a function of temperature for the solid I-liquid, solid II-liquid and solid I-solid II transitions in the ammonium halides, in particular for NH4Cl. The critical behaviour of some other thermodynamic quantities ...
Defect luminescence in undoped p-type GaSe Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01) Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Thermomagnetic effects of nondegenerate Kane semiconductors under the conditions of mutual electron-phonon drag in high electric and arbitrary magnetic fields Babaev, MM; Gassym, TM; Tas, M; Tomak, Mehmet (IOP Publishing, 2005-06-01) The thermopower and Nemst-Ettingshausen (NE) effect of nondegencrate Kane semiconductors are investigated by taking into account the electron and phonon heating and their arbitrary mutual drag. The electron spectrum is taken in the Kane two-band form. The electric and magnetic field dependences of the electronic and phonon parts of the thermoelectric and NE coefficients and voltages are obtained in analytical forms. It is shown that the mutual drag of electrons and phonons and degree of nonparabolicity of t...

Citation Formats

M. Babaev, T. Gassym, M. Tas, and M. Tomak, “Influence of mutual drag of the carrier-phonon system on the thermopower and transverse Nernst-Ettingshausen effect,” PHYSICAL REVIEW B, pp. 0–0, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47317.