Deep Traps Distribution in TlInS2 Layered Crystals

Hasanlı, Nızamı
Ozkan, H.
The trap centers and distributions in TlInS2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 x 10(-16), 2.7 x 10(-12), and 1.8 x 10(-11) cm(2), respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.


Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements
Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01)
Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements
IŞIK, MEHMET; Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (Korean Physical Society, 2008-02-01)
We have carried out thermally stimulated current (TSC) measurements with the current flowing along the layer on as-grown TlInS2 layered single crystals in the low temperature range 10 - 110 K with different heating rates of 0.1 - 1.5 K/s. Experimental evidence was found for the presence of two shallow electron trapping centers with activation energies of 12 and 14 meV. Their capture cross sections have been determined as 2.2 x 10(-23) and 7.1 x 10(-25) cm(2), respectively. It was concluded that retrapping i...
Pressure dependence of the Raman frequencies of ammonia solid I near the melting point
Yurtseven, Hasan Hamit (Institute of Physics, Polish Academy of Sciences, 2001-05-01)
We calculated in this study the Raman frequencies of some lattice modes in the melting region of ammonia solid I. The Raman frequencies of those phonon modes were obtained through the Gruneisen relation using the volume data for the ammonia solid I from the literature. Our calculated Raman frequencies require for comparison the experimental Raman frequencies measured as a function of pressure for some fixed temperatures in the ammonia solid I.
Analysis of Thermoluminescence Glow Peaks in beta-Irradiated TlGaSeS Crystals
IŞIK, MEHMET; YILDIRIM, TACETTİN; Gasanly, N. M. (Institute of Physics, Polish Academy of Sciences, 2016-06-01)
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of approximate to 370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for t...
Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals
Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2011-03-01)
Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and...
Citation Formats
M. IŞIK, N. Hasanlı, and H. Ozkan, “Deep Traps Distribution in TlInS2 Layered Crystals,” ACTA PHYSICA POLONICA A, pp. 732–737, 2009, Accessed: 00, 2020. [Online]. Available: