Low dark current N structure superlattice MWIR photodetectors

Download

index.pdf

Date

2014-05-08

Author

Salihoglu, Omer
Muti, Abdullah
Turan, Raşit
ERGÜN, YÜKSEL
AYDINLI, ATİLLA

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

160
views

0
downloads

Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises from bulk and surface contributions. Recent band structure engineering studies significantly suppressed the bulk contribution of the type-II superlattice infrared photodetectors (N structure, M structure, W structure). In this letter, we will present improved dark current results for unipolar barrier complex supercell superlattice system which is called as "N structure". The unique electronic band structure of the N structure increases electron-hole overlap under bias, significantly. N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Despite the difficulty of perfect lattice matching of InAs and AlSb, such a design is expected to reduce dark current. Experiments were carried out on Single pixel with mesa sizes of 100 x 100 - 700 x 700 mu m photodiodes. Temperature dependent dark current with corresponding R(0)A resistance values are reported.

Subject Keywords

Superlattice, Photodetector, InAs/GaSb, N design, Barrier, SiO2, Passivation

URI

https://hdl.handle.net/11511/49125

DOI

https://doi.org/10.1117/12.2050316

Collections

Department of Physics, Conference / Seminar

Suggestions

OpenMETU
Core

High performance near/short wavelength infrared megapixel InGaAs focal plane array fabrication development and new design proposals Karaca, Utku; Kocaman, Serdar; Department of Electrical and Electronics Engineering (2018) In0.53Ga0.47As is the most appropriate material system for Short Wavelength Infrared (SWIR) detection at ~1.7 μm cutoff wavelength with its relatively lower cost and high performance. Ultra-low dark current (~ nA/cm2) has been recently demonstrated in InGaAs photodetectors with planar type process by eliminating surface leakage current. Here, a fabrication procedure for planar InGaAs photodetectors with unique pixel isolation methods has been developed and ~10 nA/cm2 dark current density levels were obtaine...
High mobility, low voltage operating C-60 based n-type organic field effect transistors Schwabegger, G.; Ullah, Mujeeb; Irimia-Vladu, M.; Baumgartner, M.; Kanbur, Y.; Ahmed, R.; Stadler, P.; Bauer, S.; Sariciftci, N. S.; Sitter, H. (Elsevier BV, 2011-10-01) We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude)...
Low input voltage and high step-up integrated regulator for thermoelectric energy harvesting Pathirana, W. P. M. R.; Jayaweera, H. M. P. C.; Muhtaroglu, Ali (2015-03-26) This paper presents a low input voltage and high step-up fully integrated DC-DC regulator in 0.18 mu m standard CMOS technology for thermoelectric micro-power generation. The circuit avoids off-chip components, non-standard processes, and is thus suitable for ultra-low voltage low profile system-on-chip applications. The proposed system can deliver a regulated output voltage of 1.5 V at 31 mu W output power with an input voltage as low as 0.2 V. The maximum simulated efficiency is 22% at the given step-up r...
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode Güllü, Hasan Hüseyin; YILDIZ, DİLBER ESRA (2019-03-01) The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of th...
Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3 Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; KOCABAŞ, COŞKUN; AYDINLI, ATİLLA (2012-04-27) We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the A...

Citation Formats

O. Salihoglu, A. Muti, R. Turan, Y. ERGÜN, and A. AYDINLI, “Low dark current N structure superlattice MWIR photodetectors,” 2014, vol. 9070, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49125.