DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Date

1994-11-15

Author

Beşikci, Cengiz
Labeyrıe, G
Bıgan, E
Razeghı, M
Cohen, Jb
Carsello, J
Dravıd, Vp

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

147
views

0
downloads

InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. A room‐temperature electron Hall mobility of 2×104 cm2/V s has been obtained for a 2‐μm‐thick layer. Low‐temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three‐layer Hall‐effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n‐type behavior for a p‐type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering.

Subject Keywords

Hall effect , Chemical vapor deposition, Semiconductors, Electronic transport

URI

https://hdl.handle.net/11511/49193

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.358395

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

Kinetic investigation of chemical vapor deposition of B4C on tungsten substrate Karaman, Mustafa; Sezgi, Naime Aslı; Doğu, Timur; Ozbelge, H. Onder (2006-12-01) Production of beta-rhombohedral boron carbide (B4C) on a tungsten substrate by the chemical vapor deposition from a BCl3-H-2-CH4 gas mixture was achieved. An impinging-jet reactor was used to minimize the mass-transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B4C phase. Both dichloroborane and boron carbide formation rates were found to increase with ...
ANOMALOUS HALL-EFFECT IN INSB LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION ON GAAS SUBSTRATES Beşikci, Cengiz; SUDHARSANAN, R; RAZEGHI, M (1993-05-15) InSb epitaxial layers have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A 3.15-mum-thick film yielded an x-ray full width at half maximum of 171 arcsec. A Hall mobility of 76 200 cm2/V s at 240 K and a full width at half maximum of 174 arcsec have been measured for a 4.85-mum-thick epilayer. Measured Hall data have shown anomalous behavior. A decrease in Hall mobility with decreasing temperature has been observed and room-temperature Hall mobility has increased with ...
Assessment of InSb photodetectors on Si substrates Ozer, S; Beşikci, Cengiz (IOP Publishing, 2003-03-07) We present the detailed characteristics of small area (33 x 33 mum(2)) InSb photodiodes grown on GaAs coated Si substrates by molecular beam epitaxy. In spite of very large lattice mismatch, 80 K peak detectivity of similar to1 x 10(10) cm Hz(1/2) W-1 has been measured under backside illumination without anti-reflection coating. Differential resistance at 80 K is limited by Ohmic leakage under small reverse bias and trap assisted tunnelling (TAT) under moderately large reverse bias. In the temperature range...
Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01) Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01) ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...

Citation Formats

C. Beşikci et al., “DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION,” JOURNAL OF APPLIED PHYSICS, pp. 5820–5828, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49193.