Modification of a household microwave oven for continuous temperature and weight measurements during drying of foods

The main objective of this study was to modify a conventional household microwave oven for recording temperature and weight measurements continuously during microwave drying of foods.


Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals
Yuksek, NS; Hasanlı, Nızamı; Ozkan, H (IOP Publishing, 2003-09-01)
We have carried out thermally stimulated current measurements on as-grown T1GaS(2) layered single crystals in the temperature range of 10-60 K with various heating rates. We found experimental evidence for the presence of three trapping centres in TlGaS2, located at 6, 12 and 26 meV. We have determined the trap parameters using various methods of analysis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by the good agreement between the experimental ...
Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering
Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2020-08-01)
SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10...
Thermally stimulated currents in layered semiconductor Tl4In3GaS8
Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01)
We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (Elsevier BV, 2019-10-01)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined ...
Developing a trilayer processing technique for superconducting YBa2Cu3O7-delta thin films by using Ge ion implantation
Avci, I; Tepe, M; Oktem, B; Serincan, U; Turan, Raşit; Abukay, D (IOP Publishing, 2005-04-01)
For making trilayer superconducting devices based on YBa2Cu3O7-delta (YBCO) thin film processing, we developed a new technique by employing Ge ion implantation. A YBCO thin film of 150 nm thickness having high c-axis orientation and a transition temperature, T, of 90 K was implanted with 80 keV, 1 x 10(16) Ge ions cm(-2) at room temperature. By the result of TRIM calculation, Ge ions were found to penetrate into the YBCO thin film approximately 60 nm below the surface of the film, thus leaving the lower par...
Citation Formats
Z. Okmen and A. Bayındırlı, “Modification of a household microwave oven for continuous temperature and weight measurements during drying of foods,” JOURNAL OF MICROWAVE POWER AND ELECTROMAGNETIC ENERGY, pp. 225–231, 2000, Accessed: 00, 2020. [Online]. Available: