Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Açık Bilim Politikası
Açık Bilim Politikası
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Light induced changes in the density of states of a-Si:H
Date
1989-1
Author
Özdemir, S.
Öktü, Özcan
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
1
views
0
downloads
Thermally stimulated conductivity (TSC) and photoconductivity were measured before and after light irradiation in hydrogenated amorphous silicon (a-Si:H) films prepared by glow discharge technique. It was observed that even medium-level of exposure to light decreased both the TSC and photoconductivity by nearly an order of magnitude over a temperature range between ∼ 100 and 300 K. From these measurements the density of gap states (DOS) between the dark Fermi level and conduction band mobility edge were calculated for the samples before and after light irradiation and the DOS was found to increase with light exposure at 105 K
Subject Keywords
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
,
Ceramics and Composites
,
Materials Science, Ceramics
,
Materials Science, Multidisciplinary
URI
https://hdl.handle.net/11511/51939
Journal
Journal of Non-Crystalline Solids
DOI
https://doi.org/10.1016/0022-3093(89)90474-2
Collections
Department of Physics, Article