Current distrubution in notched fuse-elements.

Date

1973

Author

Kalkancı, Nazım

Metadata

Show full item record

Item Usage Stats

44
views

0
downloads

URI

https://hdl.handle.net/11511/5218

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Current control of single-phase VSC systems with inductor saturation using inverse dynamic model-based compensation Ozkan, Ziya; Hava, Ahmet Masum (Institute of Electrical and Electronics Engineers (IEEE), 2019-12-01) In voltage-source converter (VSC) systems, utilization of filter inductors with deep saturation characteristics is often advantageous due to the improved size, cost, and efficiency. However, with the use of conventional current regulation (CCR) methods, the inductor saturation results in significant dynamic performance loss and poor steady-state current waveform quality. This paper proposes the inverse dynamic model (IDM)-based compensation method to overcome these performance issues. The method converts th...
Current construction quality control systems used in Turkey and suggestions for further improvements Çetin, Irfan; Birgönül, Talat; Bakır, Nadir; Department of Civil Engineering (1996)
Current utilization of ICT in Turkish basic education schools a review of teacher s ICT use and barriers to integration Yıldırım, İbrahim Soner (2007-05-01)
Current transport mechanisms in low resistive CdS thin films Günal, İbrahim; Parlak, Mehmet (Springer Science and Business Media LLC, 1997-02-01) The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures ALTINDAL, ŞEMSETTİN; Kanbur, H.; Yildiz, D. E.; Parlak, Mehmet (Elsevier BV, 2007-03-30) The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height Phi(B0)(I-V), ideality factor (n) and series resistance (R-s) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the Phi(B0)(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperatur...

Citation Formats

N. Kalkancı, “Current distrubution in notched fuse-elements.,” Middle East Technical University, 1973.