Material and Si-based diode analyses of sputtered ZnTe thin films

Güllü, Hasan Hüseyin
Surucu, O. Bayrakli
Isik, M.
Terlemezoglu, M.
Parlak, M.
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 x 10(-4)(omega cm)(-1)and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm(2). The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters.


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In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature ri...
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Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Citation Formats
H. H. Güllü, O. B. Surucu, M. Isik, M. Terlemezoglu, and M. Parlak, “Material and Si-based diode analyses of sputtered ZnTe thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 11390–11397, 2020, Accessed: 00, 2020. [Online]. Available: