Material and Si-based diode analyses of sputtered ZnTe thin films

Date

2020-07-01

Author

Güllü, Hasan Hüseyin
Surucu, O. Bayrakli
Isik, M.
Terlemezoglu, M.
Parlak, M.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

156
views

0
downloads

Cite This

Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 x 10(-4)(omega cm)(-1)and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm(2). The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/52215

Collections

Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article