TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS

Date

1994-02-01

Author

OZDEMIR, S
ALTINDAL, S

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Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al-SiOx-pSi metal-insulator-semiconductor (MIS) solar cells were measured in the temperature range between 295 K and 375 K. The semilogarithmic plot of the dark forward current-voltage curves were found to be linear and the slope was almost independent of temperature in the intermediate voltage region. Consequently, the diode quality factor was strongly temperature dependent changing linearly with inverse temperature. A decrease in the zero-bias silicon band bending with increasing temperature found from the C-V characteristics was larger than the calculated values of the corresponding changes in the bulk fermi level and the silicon band gap. Analysis of the data indicated that predominant carrier transport mechanism of the solar cells in the intermediate bias voltage region investigated in this work was multistep tunnelling rather than the usual process of diffusion.

Subject Keywords

Renewable Energy, Sustainability and the Environment, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films

URI

https://hdl.handle.net/11511/65879

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS

DOI

https://doi.org/10.1016/0927-0248(94)90297-6

Collections

Department of Mathematics and Science Education, Article

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Citation Formats

S. OZDEMIR and S. ALTINDAL, “TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS,” SOLAR ENERGY MATERIALS AND SOLAR CELLS, pp. 115–127, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65879.