Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al-SiOx-pSi metal-insulator-semiconductor (MIS) solar cells were measured in the temperature range between 295 K and 375 K. The semilogarithmic plot of the dark forward current-voltage curves were found to be linear and the slope was almost independent of temperature in the intermediate voltage region. Consequently, the diode quality factor was strongly temperature dependent changing linearly with inverse temperature. A decrease in the zero-bias silicon band bending with increasing temperature found from the C-V characteristics was larger than the calculated values of the corresponding changes in the bulk fermi level and the silicon band gap. Analysis of the data indicated that predominant carrier transport mechanism of the solar cells in the intermediate bias voltage region investigated in this work was multistep tunnelling rather than the usual process of diffusion.


Experimental insight into the performance characteristics of Ni-mesh semiconductor photo-electrochemical cells
Bayer, I; Eroğlu, İnci; Turker, L (Elsevier BV, 2000-04-15)
The performance characteristics of two photo-electrochemical cells with different cell configurations were investigated at 25 degrees C and within the illumination range of 70-100 W/m(2). These cells included a jacketed single cell (JSC) and a jacketed two-compartment cell (JTC). Ni-mesh was used as a counter electrode and as a backing material for semiconductor electrodes. Semiconductor electrodes were prepared by silk-screen painting technique using TiO2, WO3, PbO, Sb2S3, ZnO, Al2O3 or CuO powder mixed wi...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01)
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Optoelectronic and electrical properties of TlGaS2 single crystal
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01)
The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
Photoelectronic, optical and electrical properties of TlInS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2003-09-01)
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the d...
Citation Formats
S. OZDEMIR and S. ALTINDAL, “TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS,” SOLAR ENERGY MATERIALS AND SOLAR CELLS, pp. 115–127, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65879.