Effect of oxygen flow rate on the low temperature deposition of titanium monoxide thin films via electron beam evaporation

Date

2019-05-01

Author

Cosar, Mustafa Burak
Icli, Kerem Cagatay
Ozenbas, Macit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

227
views

0
downloads

In this study, titanium monoxide thin films were evaporated by an electron beam source under different oxygen atmospheres at deposition temperatures not exceeding 80 degrees C. Deposition of thin films at low temperatures is a prerequisite for heat sensitive substrates. XRD results showed that crystallinity of titanium monoxide is achieved without the requirement of high temperature annealing. When oxygen is introduced into the coating chamber, a titanium peak is formed at exactly the Ti+2 position together with a small amount of Ti+3 and Ti+4 peaks. According to XPS analysis, the structure is transformed into mostly the Ti+4 state when the oxygen flow rate is over 25 sccm. The bandgap of thin films increases from 3.0 to 3.8 eV with an increase in oxygen flow rate from 1 to 50 sccm. Both optical transmission and Hall effect measurements showed the change in carrier type from p to n when the flow rate reaches 25 sccm. Electrical resistivity increases with additional oxygen in the structure, and minimum resistivity is obtained as 1.7 x 10(-4) Omega cm when no oxygen is admitted into the chamber. Highly conductive thin films were also observed via ultraviolet photoelectron spectroscopy measurements which yield a high density state showing a metallic character with degenerated oxide semiconductor nature. Published by the AVS.

Subject Keywords

Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

URI

https://hdl.handle.net/11511/66404

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

DOI

https://doi.org/10.1116/1.5082166

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

Effect of heat treatment on the stress and structure evolution of plasma deposited boron nitride thin films Anutgan, T. Aliyeva; Anutgan, M.; Wdemir, O.; Atilgan, I.; Katircioglu, B. (Elsevier BV, 2008-03-25) Boron nitride (BN) thin films are deposited at 573 K by plasma enhanced chemical vapor deposition (PECVD) with ammonia (NH3) and hydrogen diluted diborane (15% B2H6 in H-2) source gases. UV-visible and Fourier transform infrared (FTIR) spectroscopies together with surface profilometry are used for the film characterization. These films are hydrogenated (BN:H) whose hydrogen content is pursued following the 1.5 h annealing process at 748 K, 923 K and 1073 K under nitrogen atmosphere. Hydrogen escape with the...
Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films Kabacelik, Ismail; Kulakci, Mustafa; Turan, Raşit; ÜNAL, NURİ (Wiley, 2018-07-01) Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films ...
Effect of low-energy electron irradiation on (Bi, Pb)-2212 superconductors Ogun, SE; Goktas, H; Ozkan, H; Hasanlı, Nızamı (Elsevier BV, 2005-06-22) The effect of low-energy electron irradiation on the properties of the Bi-based superconductors is studied. Two sets of polycrystalline (Bi, Pb)-2212 samples were synthesized by heating the appropriate mixtures of powders at 840 degrees C for 100 h, then quenched or furnace cooled to room temperature. The samples were irradiated by low-energy (1-10 keV), pulsed (20 ns) electron beam up to a dose of 6.2 x 10(15) cm(-2). X- ray diffraction patterns, resistance-temperature behaviours, critical currents, and mi...
Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films AKSOY, FUNDA; AKGÜL, GÜVENÇ; Yıldırım, Nuray; Ünalan, Hüsnü Emrah; Turan, Raşit (Elsevier BV, 2014-10-15) In this study, effect of the post-deposition thermal annealing on copper oxide thin films has been systemically investigated. The copper oxide thin films were chemically deposited on glass substrates by spin-coating. Samples were annealed in air at atmospheric pressure and at different temperatures ranging from 200 to 600 degrees C. The microstructural, morphological, optical properties and surface electronic structure of the thin films have been studied by diagnostic techniques such as X-ray diffraction (X...
Effect of hydrogenation on B/Si(001)-(1 x 2) Cakmak, M.; Mete, E.; Ellialtıoğlu, Süleyman Şinasi (Elsevier BV, 2007-09-15) Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the effect of hydrogenation on the atomic geometries and the energetics of substitutional boron on the generic Si(001)-(1 x 2) surface. For a single B atom substitution corresponding to 0.5 ML coverage, we have considered two different sites: (i) the mixed Si-B dimer structure and (ii) boron substituting for the second-layer Si to form Si-B back-bond structure, which is energetically more favo...

Citation Formats

M. B. Cosar, K. C. Icli, and M. Ozenbas, “Effect of oxygen flow rate on the low temperature deposition of titanium monoxide thin films via electron beam evaporation,” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66404.