Solvent selection for fabrication of low temperature ZnO electron transport layer in perovskite solar cells

Ahmadi, S. Hamideh
Ghaffarkani, Mashhood
Ameri, Mohsen
Safari, Nasser
Mohajerani, Ezeddin
Zinc Oxide (ZnO) with an easy synthesis method, low processing temperature, and high charge carrier mobility has been considered as a proper electron transport layer (ETL) for perovskite solar cells. Herein, we investigate the effect of the most common solvents for the preparation of ZnO and investigate their application as ETL for PSC. ZnO layers were prepared from three different solvents 2-methoxyethanol (2ME), isopropyl alcohol (IPA) and ethanol. A complete investigation of the structural, morphological, optical and device performance was performed. The results show that the type of solvent has a significant effect on electrical, optical and structural properties of ZnO layer, the capping perovskite layer composed of methyl ammonium lead iodide (MAPbI3) and the total performance of the cell. The ZnO film prepared by 2ME as the solvent showed the best performance mainly because of better surface coverage by MAPbI3, larger grain sizes, fewer pinholes, satisfying the Pb/I theoretical stoichiometry in the perovskite layer and the highest absorbance compared to other solvents. In addition, the simulation modeling shows that the ZnO (2ME)/MAPbI3 interface has the lowest defect density and for having planar ZnO-based PSCs with PCE of over 22%, the interface defects should be kept under 10(13) cm(-3).


Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates
Ahiboz, Doguscan; Nasser, Hisham; Aygun, Ezgi; Bek, Alpan; Turan, Raşit (IOP Publishing, 2018-04-01)
Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, p...
Quantum Transport Mode in Graphene Nanoribbon Based Transistor
Hedayat, Sayed Norollah; Ahmadi, Mohammad Taghi; Sedghi, Hassan; Goudarzi, Hadi; Moradi, Shahram (American Scientific Publishers, 2017-09-01)
Graphene has incredible carrier transport property with high application opportunity at single molecule level, which composes it as promising materials on nano electronic application. In order to develop the new device such as graphene nanoribbon transistor, Carbon Nanotube Field Effect Transistor (CNTFET) and nanowire based devices, it is essential to investigate the quantum limit in low dimensional systems. In this paper transmission coefficient of the schottky structure in the graphene based transistor i...
Material and Si-based diode analyses of sputtered ZnTe thin films
Güllü, Hasan Hüseyin; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01)
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was o...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Carbon content influence on the optical constants of hydrogenated amorphous silicon carbon alloys
Akaoglu, B.; Sel, K.; Atilgan, I.; Katircioglu, B. (Elsevier BV, 2008-04-01)
Hydrogenated amorphous silicon carbon alloys (a-Si1-xCx:H) with different carbon contents are deposited by a plasma enhanced chemical vapor deposition (PECVD) system with different hydrogen diluted ethylene (C2H4) concentrations at two power densities of 30 and 90 mW/cm(2). First, the carbon and hydrogen configurations and their relative concentrations in these films are investigated in details by IR spectroscopy. Then, the ultraviolet/visible transmittance spectroscopy and a relevant characterization softw...
Citation Formats
S. H. Ahmadi, M. Ghaffarkani, M. Ameri, N. Safari, and E. Mohajerani, “Solvent selection for fabrication of low temperature ZnO electron transport layer in perovskite solar cells,” OPTICAL MATERIALS, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: