Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Uncooled Infrared Detector And Methods For Manufacturing The Same
Date
2010
Author
Akın, Tayfun
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
217
views
0
downloads
Cite This
This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.
URI
https://hdl.handle.net/11511/70139
Collections
Department of Electrical and Electronics Engineering, Patent / Utility Model
Suggestions
OpenMETU
Core
Optomechanical analysis and experimental validation of bonding based prism and mirror mounts in a laser system
Ünal, Uğur; Balkan, Raif Tuna; Department of Mechanical Engineering (2012)
In this thesis, different optomechanical design and adhesive configurations for mounting mirrors and prisms used in a laser system are investigated. Maintaining stability and strength of optical components of a laser device is difficult especially if the system is to be used in military environment. In order to determine the strength of prism mounts to high acceleration levels, mathematical correlations derived by Yoder are used. By use of these mathematical correlations, safety factor of different prism mo...
Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H
Saleh, Z. M.; NASSER, H; ÖZKOL, E; GÜNÖVEN, M; Abak, Musa Kurtuluş; Canlı, Sedat; Bek, Alpan; Turan, Raşit (2015-10-24)
Plasmonic interfaces consisting of silver nanoparticles of different sizes (50-100 nm) have been processed by the self-assembled dewetting technique and integrated to hydrogenated amorphous silicon (a-Si:H) using SiNx spacer layers to investigate the dependence of optical trapping enhancement on spacer layer thickness through the enhancements in photocurrent. Samples illuminated from the a-Si:H side exhibit a localized surface plasmon resonance (LSPR) that is red-shifted with the increasing particle size an...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Direct magnetic imaging of ferromagnetic domain structures by room temperature scanning hall probe microscopy using a bismuth micro-hall probe
SANDHU, ADARSH; MASUDA, HİROSHİ; Oral, Ahmet; BENDİNG, SİMON J (IOP Publishing, 2001-05-15)
A bismuth micro-Hall probe sensor with an integrated scanning tunnelling microscope tip was incorporated into a room temperature scanning Hall probe microscope system and successfully used for the direct magnetic imaging of microscopic domains of low coercivity perpendicular garnet thin films and demagnetized strontium ferrite permanent magnets. At a driving current of 800 muA, the Hall coefficient, magnetic field sensitivity and spatial resolution of the Bi probe were 3.3 x 10(-4) Omega /G, 0.38 G/root Hz ...
Direct and real-time observation of sub-micron domain dynamics in magnetically biased strontium ferrite permanent magnets by room temperature scanning micro-Hall probe microscopy
Sandhu, Adarsh; Iida, Naoji; Masuda, Hiroshi; Oral, Ahmet; Bending, Simon J. (2001-01-01)
A room temperature scanning micro-Hall probe microscope (RT-SHPM) was used for imaging stray magnetic field fluctuations at the surfaces of strontium ferrite permanent magnets (SFM) in the presence of external bias fields. The RT-SHPM enables the extremely fast, non-invasive, and quantitative measurement of localized surface magnetic fields on the sub-micron-scale. A 0.8 × 0.8 μm2 GaAs/AlGaAs micro-Hall probe (300K Hall coefficient = 0.3Ω/G; field sensitivity = 0.04 G/√Hz) with an integrated STM tip for pre...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
T. Akın, “Uncooled Infrared Detector And Methods For Manufacturing The Same,” 00, 2010.