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Uncooled Infrared Detector And Methods For Manufacturing The Same
Date
2010
Author
Akın, Tayfun
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.
URI
https://hdl.handle.net/11511/70139
Collections
Department of Electrical and Electronics Engineering, Patent / Utility Model
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T. Akın, “Uncooled Infrared Detector And Methods For Manufacturing The Same,” 00, 2010.
