Pump-probe measurements in silicon-rich nitride waveguides and resonators doped with erbium

Date

2009-12-01

Author

Olaosebikan, Debo
Gondarenko, Alexander
Preston, Kyle
Lipson, Michal
Yerci, SELÇUK
Li, Rui
Negro, Luca Dal

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We report a suppression, attributed to erbium stimulated emission, of the photoinduced absorption of a 1.53um probe in erbium doped silicon rich nitride waveguides. Resonators with record high quality factors >14,000 are achieved.

Subject Keywords

Silicon Oxides, Erbium, Electrochemiluminescence

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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84894050573&origin=inward
https://hdl.handle.net/11511/70631

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Graduate School of Natural and Applied Sciences, Conference / Seminar

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Pump-probe measurements in silicon-rich nitride waveguides and resonators doped with erbium Olaosebikan, Debo; Gondarenko, Alexander; Preston, Kyle; Lipson, Michal; Yerci, Selçuk; Li, Rui; Luca, Dal Negro (2009-11-16) We report a suppression, attributed to erbium stimulated emission, of the photoinduced absorption of a 1.53um probe in erbium doped silicon rich nitride waveguides. Resonators with record high quality factors >14,000 are achieved.
Planar silicon-rich nitride resonators doped with neodymium Olaosebikan, Debo; Lipson, Michal; Yerci, Selçuk; Negro, Luca Dal (2011-12-01) We report on the characterization of neodymium doped silicon rich nitride resonators at 1550nm. We demonstrate the feasibility of use in photonic circuits and demonstrate ring resonators with quality factors of > 5,000.
Absorption bleaching by stimulated emission in erbium-doped silicon-rich silicon nitride waveguides Olaosebikan, Debo; Yerci, Selcuk; Yerci, Selçuk; Preston, Kyle; Li, Rui; Dal Negro, Luca; Lipson, Michal (2011-01-01) Stimulated emission from sensitized erbium ions in silicon-rich silicon nitride is demonstrated by pump-probe measurements carried out in waveguides. A decrease in the photoinduced absorption of the probe at the wavelength of erbium emission is observed and is attributed to stimulated emission from erbium excited indirectly via localized states in the silicon nitride matrix. (C) 2010 Optical Society of America
Electroluminescence of erbium doped silicon nitride films Yerci, Selçuk; Dal Negro, L. (2010-12-01) Electroluminescence at 980nm and 1535nm from erbium-doped silicon nitride films was reported and the Er effective excitation cross section was measured under electrical pumping. Erbium electroluminescence is observed at voltages as low as 5V. © 2010 Optical Society of America.
Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films Yerci, Selçuk; Basu, Soumendra N.; Negro, Luca Dal (2009-12-01) We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.

Citation Formats

D. Olaosebikan et al., “Pump-probe measurements in silicon-rich nitride waveguides and resonators doped with erbium,” 2009, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84894050573&origin=inward.