Electroluminescence of erbium doped silicon nitride films

2010-12-01
Yerci, Selçuk
Dal Negro, L.
Electroluminescence at 980nm and 1535nm from erbium-doped silicon nitride films was reported and the Er effective excitation cross section was measured under electrical pumping. Erbium electroluminescence is observed at voltages as low as 5V. © 2010 Optical Society of America.
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN Monterey, CA, United States Of America,(2010)

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Citation Formats
S. Yerci and L. Dal Negro, “Electroluminescence of erbium doped silicon nitride films,” presented at the Integrated Photonics Research, Silicon and Nanophotonics, IPRSN Monterey, CA, United States Of America,(2010), Monterey, CA, United States Of America, 2010, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896802897&origin=inward.