Electroluminescence of erbium doped silicon nitride films

Date

2010-12-01

Author

Yerci, Selçuk
Dal Negro, L.

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Electroluminescence at 980nm and 1535nm from erbium-doped silicon nitride films was reported and the Er effective excitation cross section was measured under electrical pumping. Erbium electroluminescence is observed at voltages as low as 5V. © 2010 Optical Society of America.

Subject Keywords

Electrical pumping, Erbium-doped silicon, Excitation cross section

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896802897&origin=inward
https://hdl.handle.net/11511/71813

DOI

https://doi.org/10.1364/iprsn.2010.pdiwi3

Conference Name

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN Monterey, CA, United States Of America,(2010)

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

S. Yerci and L. Dal Negro, “Electroluminescence of erbium doped silicon nitride films,” presented at the Integrated Photonics Research, Silicon and Nanophotonics, IPRSN Monterey, CA, United States Of America,(2010), Monterey, CA, United States Of America, 2010, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896802897&origin=inward.