2-6 GHZ GALLIUM NITRIDE HEMT MMIC AMPLIFIER DESIGN

2022-1
Çakmak, Mert
Wideband RF power amplifiers are critical components in many electronic systems such as communication systems, radars and electronic warfare systems. Chip size, output power, efficiency and reliability are key points of the performance of those electronic systems. Recently, Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are widely used to satisfy system requirements. GaN HEMT process provides high output power, high efficiency and reliability performance at microwave frequencies due to its wide band gap properties [1]. In this thesis, 2-6 GHz GaN MMIC driver amplifier is designed with 5 W output power and 40% power added efficiency (PAE). In this type of broadband amplifiers, undesirable performance drops can be observed because of the harmonics effect. To achieve target RF performances in the first production, matchings are modified by considering harmonics. Advanced Design System (ADS) software program is used during design. Fabrication and measurement steps are also performed. In this work, remarkable RF performances are achieved compared with similar examples.

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Citation Formats
M. Çakmak, “2-6 GHZ GALLIUM NITRIDE HEMT MMIC AMPLIFIER DESIGN,” M.S. - Master of Science, Middle East Technical University, 2022.