Investigation of structural, electrical and optical properties of CU1-XAGXINSE2 thin films as a function of X content

Download

index.pdf

Date

2010

Author

Güllü, Hasan Hüseyin

Metadata

Show full item record

Item Usage Stats

184
views

67
downloads

In this work, we will focus on the quaternary system Cu1-xAgxInSe2 (CAIS) to investigate the effects of silver (Ag) contribution and exchange with copper (Cu) in CuInSe2. This system is located between the ternary semiconducting chalcopyrite compounds CuInSe2 and AgInSe2. These are two most popular materials applied in photovoltaic cells because of their high optical absorption coefficient, which is an important factor for the manufacture of devices, direct energy gap with values Eg ~1.05 and 1.24 eV, respectively, and excellent thermal stabilities in air. As being a quaternary alloy, we expect that Cu1-xAgxInSe2 will show the advantage of a large degree of variation of their properties as a function of the composition, which allows adjusting of the band gap and other properties. We will analyze the behavior of Ag in the structure depending on the annealing and the effects of the Ag exchange to the Cu vacancies in this crystal structure by changing x (Ag content). The crystals will be characterized structurally by X-ray diffraction (XRD). It will be used to prove crystallinity, determine perfection and lattice parameters depending on composition. Surface morphology and stoichiometry will be examined using scanning electron microscope (SEM) equipped with EDXA. Moreover, electrical properties including the temperature dependent electrical conductivity, and carrier concentrations and mobility extracted from Hall effect measurements, and, optical properties including absorption coefficient, photoconductivity, spectral transmission, and optical band gap have been determined to characterize Cu1-xAgxInSe2 thin films deposited using e-beam evaporation technique.

Subject Keywords

Physics.

URI

http://etd.lib.metu.edu.tr/upload/12612364/index.pdf
https://hdl.handle.net/11511/19925

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Growth and characterization of InSe single crystals Deniz, Derya; Akınoğlu, Bülent Gültekin; Department of Physics (2004) In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the elect...
Development of atomic force microscopy system and kelvin probe microscopy system for use in semiconductor nanocrystal characterization Bostancı, Umut; Turan, Raşit; Department of Physics (2007) Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different g...
Optical properties of silicon based amorphous thin films Akaoğlu, Barış; Katırcıoğlu, Bayram; Department of Physics (2004) Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distribu...
Calculation of phase diagrams and the thermodynamic quantities from the mean field models close to phase transitions in molecular and liquid crystals Şen, Sema; Yurtseven, Hasan Hamit; Department of Physics (2009) This study gives our calculations for the temperature-pressure and temperature-concentration phase diagrams using the mean field models applied to ammonium halides (NH4Cl, ND4Cl), ammonium sulfate ((NH4)2SO4/H2O), lithium potassium rubidium sulfate (LiK1-xRbxSO4), potassium pyrosulfate-potassium hydrogensulfate (K2S2O7-KHSO4), cholestanyl myristate-cholesteryl myristate (CnM-CrM), cholestanyl myristate-cholesteryl oleate (CnM-CO), benzene (C6H6) and ice. The phase line equations are derived from the free en...
Formation of semiconductor nanocrystals in sio2 by ion implantation Serincan, Uğur; Turan, Raşit; Department of Physics (2004) In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, anneal...

Citation Formats

H. H. Güllü, “Investigation of structural, electrical and optical properties of CU1-XAGXINSE2 thin films as a function of X content,” M.S. - Master of Science, Middle East Technical University, 2010.