Gan-based robust low-noise amplifier

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2018
Kazan, Oğuz
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This thesis presents the theory, design and evaluation of low-noise amplifiers (LNAs) with high input power immunity, built on GaN/SiC substrate. Two separate X-band (8-12 GHz) LNAs are designed and sent out for production. After the manufactured samples are received, they are measured and evaluated. Measurement results show that both LNAs have a gain of more than 20 dB. One LNA achieves a noise figure of less than 2 dB, while the second one has a noise figure of less than 2.5 dB. Using three-stage topology, high linearity is achieved with an OIP3 of 29 dBm at 0.6 W power dissipation for one of the LNAs, and an OIP3 of 28.3 dBm is achieved at 0.36 W power dissipation for the other LNA. The robustness tests show that the circuits survive 2.5 W (34 dBm) input power. This survivability performance enables the use of presented LNAs in electronic warfare systems without a need of a diode limiter. With a size of just 2.8 × 1.3 mm2 (3.6 mm2) the presented LNAs are compact when compared to the state of the art. The circuits are realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
Gallium nitride., Amplifiers (Electronics)., Microwave integrated circuits., Noise.
http://etd.lib.metu.edu.tr/upload/12622356/index.pdf
https://hdl.handle.net/11511/27388
Graduate School of Natural and Applied Sciences, Thesis

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Citation Formats
O. Kazan, “Gan-based robust low-noise amplifier,” M.S. - Master of Science, Middle East Technical University, 2018.
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