Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Date

2014-12

Author

Yıldız, D.E.
Karakuş, M.
Toppare, Levent Kamil
Çırpan, Ali

Metadata

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In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.

Subject Keywords

Poole-Frenkel (PF) effect, Current conduction mechanisms, Leakage current, Leakage current, Organic devices

URI

https://hdl.handle.net/11511/28267

Journal

Materials Science in Semiconductor Processing

DOI

https://doi.org/10.1016/j.mssp.2014.06.038

Collections

Department of Chemistry, Article

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Citation Formats

D. E. Yıldız, M. Karakuş, L. K. Toppare, and A. Çırpan, “Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices,” Materials Science in Semiconductor Processing, pp. 84–88, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28267.