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Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices
Date
2014-12
Author
Yıldız, D.E.
Karakuş, M.
Toppare, Levent Kamil
Çırpan, Ali
Metadata
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In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.
Subject Keywords
Poole-Frenkel (PF) effect
,
Current conduction mechanisms
,
Leakage current
,
Leakage current
,
Organic devices
URI
https://hdl.handle.net/11511/28267
Journal
Materials Science in Semiconductor Processing
DOI
https://doi.org/10.1016/j.mssp.2014.06.038
Collections
Department of Chemistry, Article
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D. E. Yıldız, M. Karakuş, L. K. Toppare, and A. Çırpan, “Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices,”
Materials Science in Semiconductor Processing
, pp. 84–88, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28267.