Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

2014-12
Yıldız, D.E.
Karakuş, M.
Toppare, Levent Kamil
Çırpan, Ali
In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.
Citation Formats
D. E. Yıldız, M. Karakuş, L. K. Toppare, and A. Çırpan, “Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices,” pp. 84–88, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28267.