Low-temperature photoluminescence spectra of InS single crystals

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Date

1997-03-01

Author

Hasanlı, Nızamı
Aydinli, A

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Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions hom the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals. (C) 1997. Elsevier Science Ltd.

Subject Keywords

Semiconductors, Optical Properties, Luminescence

URI

https://hdl.handle.net/11511/48328

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/s0038-1098(96)00704-1

Collections

Department of Physics, Article

Citation Formats

N. Hasanlı and A. Aydinli, “Low-temperature photoluminescence spectra of InS single crystals,” SOLID STATE COMMUNICATIONS, vol. 101, no. 11, pp. 797–799, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48328.