Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current

Date

2018-06-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı
TÜZEMEN, Sebahattin

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The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with concentrations of 2.7 x 10(11) and 1.3 x 10(11) cm(-3), respectively.

Subject Keywords

Semiconductors, Defects, Electrical properties

URI

https://hdl.handle.net/11511/46639

Journal

IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE

DOI

https://doi.org/10.1007/s40995-016-0139-z

Collections

Department of Physics, Article

Citation Formats

T. YILDIRIM, N. Hasanlı, and S. TÜZEMEN, “Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE, vol. 42, pp. 947–950, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46639.