Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current
Date
2018-06-01
Author
YILDIRIM, TACETTİN
Hasanlı, Nızamı
TÜZEMEN, Sebahattin
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
4
views
0
downloads
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with concentrations of 2.7 x 10(11) and 1.3 x 10(11) cm(-3), respectively.
Subject Keywords
Semiconductors
,
Defects
,
Electrical properties
URI
https://hdl.handle.net/11511/46639
Journal
IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE
DOI
https://doi.org/10.1007/s40995-016-0139-z
Collections
Department of Physics, Article