Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current

Date

2018-06-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı
TÜZEMEN, Sebahattin

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

29
views

0
downloads

The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with concentrations of 2.7 x 10(11) and 1.3 x 10(11) cm(-3), respectively.

Subject Keywords

Semiconductors, Defects, Electrical properties

URI

https://hdl.handle.net/11511/46639

Journal

IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE

DOI

https://doi.org/10.1007/s40995-016-0139-z

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01) As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Analysis of glow curve of GaS0.5Se0.5 single crystals IŞIK, MEHMET; Delice, Serdar; Hasanlı, Nızamı (2015-12-01) Characterization of shallow trapping centers in GaS0.5Se0.5 crystals grown by a Bridgman method was carried out in the present work using thermoluminescence (TL) measurements performed in the low temperature range of 10-300 K. The activation energies of the trapping centers were obtained under the light of results of various analysis methods. The presence of three trapping centers located at 6, 30 and 72 meV was revealed. The analysis of the experimental glow curve gave reasonable results under the model th...
Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence Güler, Işıkhan; Hasanlı, Nızamı (2018-04-01) Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 K s(-1). From the analysis of both initial rise and curve fitting methods, the activation energy of the traps is obtained as 23 meV. The Chen's method is also used to find activation energy. By means of this technique, the activation energy of the TL glow curve is calculated as 25 meV. Fr...
Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals IŞIK, MEHMET; YILDIRIM, TACETTİN; Hasanlı, Nızamı (2015-07-01) Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trap...
Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-10-19) Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was...

Citation Formats

T. YILDIRIM, N. Hasanlı, and S. TÜZEMEN, “Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE, pp. 947–950, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46639.