Analysis of glow curve of GaS0.5Se0.5 single crystals

Delice, Serdar
Hasanlı, Nızamı
Characterization of shallow trapping centers in GaS0.5Se0.5 crystals grown by a Bridgman method was carried out in the present work using thermoluminescence (TL) measurements performed in the low temperature range of 10-300 K. The activation energies of the trapping centers were obtained under the light of results of various analysis methods. The presence of three trapping centers located at 6, 30 and 72 meV was revealed. The analysis of the experimental glow curve gave reasonable results under the model that assumes slow retrapping which states the order of kinetics as b=1. Heating rate dependence of the observed TL peaks was studied for the rates between 0.4 and 1.0 K/s. Distribution of the traps was also investigated using an experimental technique based on the thermal cleaning of centers giving emission at lower temperatures. The distributed levels with activation energies increasing from 6 to 136 meV were revealed by increasing the stopping temperature from 10 to 52 K.


Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements
Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01)
As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence
Güler, Işıkhan; Hasanlı, Nızamı (2018-04-01)
Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 K s(-1). From the analysis of both initial rise and curve fitting methods, the activation energy of the traps is obtained as 23 meV. The Chen's method is also used to find activation energy. By means of this technique, the activation energy of the TL glow curve is calculated as 25 meV. Fr...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01)
Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current
YILDIRIM, TACETTİN; Hasanlı, Nızamı; TÜZEMEN, Sebahattin (2018-06-01)
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with con...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals
Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25)
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Citation Formats
M. IŞIK, S. Delice, and N. Hasanlı, “Analysis of glow curve of GaS0.5Se0.5 single crystals,” JOURNAL OF LUMINESCENCE, pp. 236–240, 2015, Accessed: 00, 2020. [Online]. Available: