Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence

Date

2018-04-01

Author

Güler, Işıkhan
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

184
views

0
downloads

Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 K s(-1). From the analysis of both initial rise and curve fitting methods, the activation energy of the traps is obtained as 23 meV. The Chen's method is also used to find activation energy. By means of this technique, the activation energy of the TL glow curve is calculated as 25 meV. From both Chen's method and curve fitting method, the existence of mixed order of kinetics in Tl2In2S3Se crystal is found. The cross section to capture of the trap center is found out from the results of curve fitting method. The trap distribution of the crystals is investigated with different temperatures of illumination at a constant warming rate of 0.8 K s(-1). The temperatures of illumination change from 10 to 22 K. As a result of the increase in temperatures of illumination, the peak maximum values move to higher temperatures and intensity of the TL curves decreases. This behavior shows us that quasicontinuous traps distribution is present in Tl2In2S3Se layered single crystals.

Subject Keywords

Defects, Semiconductors, Thermoluminescence

URI

https://hdl.handle.net/11511/31674

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.201700134

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Analysis of glow curve of GaS0.5Se0.5 single crystals IŞIK, MEHMET; Delice, Serdar; Hasanlı, Nızamı (2015-12-01) Characterization of shallow trapping centers in GaS0.5Se0.5 crystals grown by a Bridgman method was carried out in the present work using thermoluminescence (TL) measurements performed in the low temperature range of 10-300 K. The activation energies of the trapping centers were obtained under the light of results of various analysis methods. The presence of three trapping centers located at 6, 30 and 72 meV was revealed. The analysis of the experimental glow curve gave reasonable results under the model th...
Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current YILDIRIM, TACETTİN; Hasanlı, Nızamı; TÜZEMEN, Sebahattin (2018-06-01) The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with con...
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01) As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2014-11-01) Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70K with various heating rate ranging from 0.6 to 1.0K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13meV was found by the application of curve fitting method. This practical...
Low-temperature thermoluminescence in TlGaS2 layered single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2013-03-01) Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five de...

Citation Formats

I. Güler and N. Hasanlı, “Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31674.