Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

2012-11-01
The absorption edge of undoped Tl2Ga2S3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440-1100 nm and in the temperature range 10-300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature gamma = -2.6 x 10(-4) eV/K and the absolute zero value of the band gap energy E-gi(0)=2.42 eV were obtained.
PHYSICA B-CONDENSED MATTER

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Citation Formats
N. Hasanlı, “Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals,” PHYSICA B-CONDENSED MATTER, pp. 4318–4322, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32904.