Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

Date

2012-11-01

Author

Hasanlı, Nızamı

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The absorption edge of undoped Tl2Ga2S3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440-1100 nm and in the temperature range 10-300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature gamma = -2.6 x 10(-4) eV/K and the absolute zero value of the band gap energy E-gi(0)=2.42 eV were obtained.

Subject Keywords

Semiconductors, Optical properties, Energy band gap, Photoluminescence, X-ray diffraction

URI

https://hdl.handle.net/11511/32904

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.07.025

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Department of Physics, Article

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LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS ALLAKHVERDIEV, KR; Hasanlı, Nızamı; AYDINLI, A (1995-06-01) Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.
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Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals Hasanlı, Nızamı (2018-02-01) Transmission on TlIn(Se1-xSx)(2) mixed crystals (0.25 <= x <= 1) were carried out in the 400-800 nm wavelength range at T = 10 K. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance. The compositional dependence of direct band gap energy at T = 10 K revealed that as sulfur composition is increased in the mixed crystals, the direct band gap energy rises from 2.26 eV (x = 0.25) to 2.56 eV (x = 1).
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Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31) The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...

Citation Formats

N. Hasanlı, “Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals,” PHYSICA B-CONDENSED MATTER, pp. 4318–4322, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32904.