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Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals
Date
2012-11-01
Author
Hasanlı, Nızamı
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The absorption edge of undoped Tl2Ga2S3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440-1100 nm and in the temperature range 10-300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature gamma = -2.6 x 10(-4) eV/K and the absolute zero value of the band gap energy E-gi(0)=2.42 eV were obtained.
Subject Keywords
Semiconductors
,
Optical properties
,
Energy band gap
,
Photoluminescence
,
X-ray diffraction
URI
https://hdl.handle.net/11511/32904
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2012.07.025
Collections
Department of Physics, Article
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N. Hasanlı, “Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals,”
PHYSICA B-CONDENSED MATTER
, pp. 4318–4322, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32904.