Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals

Date

2018-02-01

Author

Hasanlı, Nızamı

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Transmission on TlIn(Se1-xSx)(2) mixed crystals (0.25 <= x <= 1) were carried out in the 400-800 nm wavelength range at T = 10 K. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance. The compositional dependence of direct band gap energy at T = 10 K revealed that as sulfur composition is increased in the mixed crystals, the direct band gap energy rises from 2.26 eV (x = 0.25) to 2.56 eV (x = 1).

Subject Keywords

Semiconductors, Band gap energy, Photoluminescence, Mixed crystals

URI

https://hdl.handle.net/11511/37719

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2017.11.042

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals,” PHYSICA B-CONDENSED MATTER, pp. 82–85, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37719.