Fabrication and Characterization of Gold-Tin Eutectic Bonding for Hermetic Packaging of MEMS Devices

Date

2014-12-05

Author

DEMIR, Eyup Can
TORUNBALCI, M. Mert
DONMEZ, Inci
Kalay, Yunus Eren
Akın, Tayfun

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This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low-temperature (300 degrees C) Au-Sn bonding together with their pre- and post-bonding characterization. Thermal evaporation method was used for metallization which is easy and controllable method for low thickness metallization. In this respect, the current study represents preliminary characterization results of Au-Sn pre-and post-bonding with an average thickness of less than 1.5 mu m processed by thermal evaporation method. The real fabrication conditions for commercial sensor devices were simulated during the bonding trials. The optimum bonding was applied to sensor devices to ensure the reliability of the encapsulation. The average shear-strength upon constant strain rate of 0.5 mm.min(-1) was found to be around 23 MPa which indicates a mechanically strong bonding for 1.5 mu m thick sealing rings.

Subject Keywords

Solidification, System

URI

https://hdl.handle.net/11511/34271

DOI

https://doi.org/10.1109/eptc.2014.7028329

Collections

Department of Metallurgical and Materials Engineering, Conference / Seminar

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Citation Formats

E. C. DEMIR, M. M. TORUNBALCI, I. DONMEZ, Y. E. Kalay, and T. Akın, “Fabrication and Characterization of Gold-Tin Eutectic Bonding for Hermetic Packaging of MEMS Devices,” 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34271.