Investigation of post-thermal annealing on material properties of Cu-In-Zn-Se thin films

Date

2017-12-01

Author

Gullu, H. H.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

183
views

0
downloads

The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu0.5In0.5ZnSe2. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 10(5) cm(-1) in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark-and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/43839

Journal

JOURNAL OF SEMICONDUCTORS

DOI

https://doi.org/10.1088/1674-4926/38/12/123001

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2020-08-01) SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (Elsevier BV, 2019-10-01) In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined ...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique ÇOLAKOĞLU, TAHİR; Parlak, Mehmet; ÖZDER, SERHAT (Elsevier BV, 2008-07-15) The optical properties of the Ag-In-Se (AlS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10(3) to 10(5) cm(-1) over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 degrees C were evaluated by means of both envelope method (EM) and continuous wavel...

Citation Formats

H. H. Gullu and M. Parlak, “Investigation of post-thermal annealing on material properties of Cu-In-Zn-Se thin films,” JOURNAL OF SEMICONDUCTORS, pp. 0–0, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43839.