Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0 <= x <= 1)
Date
2012-09-15
Author
IŞIK, MEHMET
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
200
views
0
downloads
Cite This
In this paper, the spectroscopic ellipsometry measurements on TlGaS2xSe2(1 - x) mixed crystals (0 <= x <= 1) were carried out on the layer-plane (001) surfaces with light polarization E perpendicular to c* in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the dielectric function, refractive index and extinction coefficient were calculated from ellipsometric data using the ambient-substrate optical model. The critical point energies in the above-band gap energy range have been obtained from the second derivative spectra of the dielectric function. Particularly for TlGaSe2 crystals, the determined critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure. The effect of the isomorphic anion substitution (sulfur for selenium) on critical point energies in TlGaS2xSe2(1 - x) mixed crystals was established.
Subject Keywords
Semiconductors
,
Optical constants
,
Ellipsometry
URI
https://hdl.handle.net/11511/39507
Journal
OPTICS COMMUNICATIONS
DOI
https://doi.org/10.1016/j.optcom.2012.06.029
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1)
IŞIK, MEHMET; Hasanlı, Nızamı (2013-12-25)
The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variati...
Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements
IŞIK, MEHMET; ÇETİN, ŞABAN; Hasanlı, Nızamı; ÖZÇELİK, SÜLEYMAN (2012-05-01)
We have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53...
Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2014-01-01)
The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectri...
Ellipsometry study of optical parameters of AgIn5S8 crystals
IŞIK, MEHMET; Gasanly, NIZAMI (2015-12-01)
Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometiy experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscill...
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01)
Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. IŞIK and N. Hasanlı, “Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0 <= x <= 1),”
OPTICS COMMUNICATIONS
, pp. 4092–4096, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39507.