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Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements
Date
2013-01-01
Author
IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit
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Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature.
Subject Keywords
Semiconductors
,
Ellipsometry
,
Pseudorefractive index
URI
https://hdl.handle.net/11511/48647
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2012.09.051
Collections
Department of Physics, Article
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M. IŞIK, N. Hasanlı, and R. Turan, “Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements,”
PHYSICA B-CONDENSED MATTER
, pp. 43–45, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48647.