Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements

Date

2013-01-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit

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Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature.

Subject Keywords

Semiconductors, Ellipsometry, Pseudorefractive index

URI

https://hdl.handle.net/11511/48647

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.09.051

Collections

Department of Physics, Article

Citation Formats

M. IŞIK, N. Hasanlı, and R. Turan, “Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements,” PHYSICA B-CONDENSED MATTER, vol. 408, pp. 43–45, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48647.