Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements

Date

2013-01-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

145
views

0
downloads

Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature.

Subject Keywords

Semiconductors, Ellipsometry, Pseudorefractive index

URI

https://hdl.handle.net/11511/48647

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.09.051

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) IŞIK, MEHMET; Hasanlı, Nızamı (2013-12-25) The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variati...
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01) Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements IŞIK, MEHMET; ÇETİN, ŞABAN; Hasanlı, Nızamı; ÖZÇELİK, SÜLEYMAN (2012-05-01) We have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53...
Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0 <= x <= 1) IŞIK, MEHMET; Hasanlı, Nızamı (2012-09-15) In this paper, the spectroscopic ellipsometry measurements on TlGaS2xSe2(1 - x) mixed crystals (0 <= x <= 1) were carried out on the layer-plane (001) surfaces with light polarization E perpendicular to c* in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the dielectric function, refractive index and extinction coefficient were calculated from ellipsometric data using the ambient-substrate optical model. The critical point energies in the above-band gap energy range have ...
Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2014-01-01) The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectri...

Citation Formats

M. IŞIK, N. Hasanlı, and R. Turan, “Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements,” PHYSICA B-CONDENSED MATTER, pp. 43–45, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48647.