In situ Measurements of Irradiation-Induced Creep of Nanocrystalline Copper at Elevated Temperatures

Date

2016-11-01

Author

Özerinç, Sezer
KING, William P.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

87
views

0
downloads

We have measured irradiation-induced creep on nanocrystalline copper micropillars at elevated temperatures. The micropillars, which were approximate to 1 mu m in diameter and approximate to 2 mu m in height, were fabricated from magnetron-sputtered nanocrystalline copper films. The micropillars were compressed during 2.0 MeV Ar+ bombardment and the deformation measured in situ by laser interferometry. The creep rate was measured over the stress range 10-120 MPa at approximate to 200 degrees C. The results show linear relationships of creep rate with both applied stress and displacement rate, yielding a creep compliance of 0.07 dpa(-1) GPa(-1) (dpa:displacement per atom). The findings are in good agreement with the previous results obtained using a bulge test on free-standing thin film specimens.

Subject Keywords

General Engineering, General Materials Science

URI

https://hdl.handle.net/11511/42193

Journal

JOM

DOI

https://doi.org/10.1007/s11837-016-2077-9

Collections

Department of Mechanical Engineering, Article

Suggestions

OpenMETU
Core

Evaluation of the radiative recombination mechanism in Si nanocrystals embedded in silica matrix Righini, Marcofabio; Gnoli, Andrea; Razzari, Luca; Serincan, Ugur; Turan, Raşit (American Scientific Publishers, 2008-02-01) We report measurements of the temperature dependence of photoluminescence (PQ life-time and efficiency of Si nanocrystals (Si-Nc) embedded in silica matrix. We use a practical technique based on lock-in acquisition that allows us to simultaneously evaluate, at each emission-energy, intensity and decay-time of the detected signal. Samples are prepared by Silicon-ion implantation in a SiO2 layer followed by thermal annealing. The implantation dose of Si ions ranges between 2 x 10(16) cm(-2) and 2 x 10(17) cm(...
Anisotropy of electrical resistivity and hole mobility in InTe single crystals Parlak, Mehmet; Günal, İbrahim; Hasanlı, Nızamı (Wiley, 1996-01-01) The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain single crystals in parallel and perpendicular directions to c-axis have been investigated in the temperature range of 28-260 K. The high anisotropy between rho(parallel to) and rho(perpendicular to) which depends on temperature is attributed to high concentration of stacking faults due to weak interchain bonding. The mobility parallel to c-axis was found to vary with temperature as mu proportional to T-n where n...
Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal Hasanlı, Nızamı; Ozkan, H. (Wiley, 2006-11-01) Thermally stimulated current measurements are carried out on as-grown Tl4Ga3InSe8 layered single crystal in the temperature range 10-160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl4Ga3InSe8. They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experim...
Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals Yuksek, NS; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-01-01) The temperature dependence of the unpolarized Raman spectra from TlInS2 layered crystal was measured between 10 and 300 K. The analysis of the experimental data showed that the temperature dependences of wavenumbers and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. This work demonstrates that the two Raman modes at 280.9 and 292.3 cm(-1...
Photoelectronic and electrical properties of CuIn5S8 single crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2003-01-01) To identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region ...

Citation Formats

S. Özerinç and W. P. KING, “In situ Measurements of Irradiation-Induced Creep of Nanocrystalline Copper at Elevated Temperatures,” JOM, pp. 2737–2741, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42193.