Trap levels in layered semiconductor Ga2SeS

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2004-12-01

Author

Aydinli, A
Hasanlı, Nızamı
Aytekin, S

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Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga2SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7 x 10(-23), 1.8 x 10(-23) and 2.8 x 10(-22) cm(2) with concentrations of 1.3 x 10(12), 5.4 x 10(12) and 4.2 x 10(12) cm(-3), respectively.

Subject Keywords

Materials Chemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/44267

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2004.08.028

Collections

Department of Physics, Article

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Citation Formats

A. Aydinli, N. Hasanlı, and S. Aytekin, “Trap levels in layered semiconductor Ga2SeS,” SOLID STATE COMMUNICATIONS, pp. 857–861, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44267.