Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Low-cost uncooled infrared detectors in CMOS process
Date
2003-12-01
Author
Eminoglu, S
Tezcan, DS
Tanrikulu, MY
Akın, Tayfun
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
193
views
0
downloads
Cite This
This paper reports the implementation and comparison of two low-cost uncooled infrared microbolometer detectors that car be implemented using standard n-well CMOS processes. One type is based on a suspended n-well resistor, which is implemented in a 0.8 mum CMOS process and has a pixel size of 80 mum x 80 mum with a fill factor of 13%; and the other type is based on a suspended p(+)-active/n-well diode, which is implemented in a 0.35 mum CMOS process and has a pixel size of 40 mum x 40 mum with a fill factor of 44%. These detectors can be obtained with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The diode type detector has a measured dc responsivity (R) of 4970 V/W at 20 muA bias and a thermal time constant of 35.8 ms at 80 mTorr vacuum level, and it has a measured rms noise of 0.52 muV for a 4 kHz bandwidth, resulting in a detectivity (D*) of 9.7 x 10(8) cm Hz(1 /2)/W. The resistive n-well detector can provide the same dc responsivity at 1.68 V detector bias voltage, with about 10 times more self-heating as compared to that of the diode type detector. This detector has a measured rms noise of 0.81 RV for a 4 kHz bandwidth, resulting in a detectivity (D*) of 8.9 x 10(8) cm Hz(1/2)/W, which can be improved further with higher detector bias voltages at the expense of increased self-heating. The diode type detector is better for low-cost large format infrared detector arrays, since it has a superior response even at reduced pixel sizes and lower biasing levels.
Subject Keywords
Instrumentation
,
Electrical and Electronic Engineering
,
Electronic, Optical and Magnetic Materials
,
Surfaces, Coatings and Films
,
Condensed Matter Physics
,
Metals and Alloys
URI
https://hdl.handle.net/11511/46196
Journal
SENSORS AND ACTUATORS A-PHYSICAL
DOI
https://doi.org/10.1016/j.sna.2003.08.013
Collections
Department of Electrical and Electronics Engineering, Article
Suggestions
OpenMETU
Core
A wireless batch sealed absolute capacitive pressure sensor
Akar, O.; Akın, Tayfun; Najafi, K. (Elsevier BV, 2001-12-15)
This paper reports the development of an absolute wireless pressure sensor that consists of a capacitive sensor and a gold-electroplated planar coil. Applied pressure deflects a 6 mum-thin silicon diaphragm, changing the capacitance formed between it and a metal electrode supported on a glass substrate. The resonant frequency of the LC circuit formed by the capacitor and the inductor changes as the capacitance changes; this change is sensed remotely through inductive coupling, eliminating the need for wire ...
A low-cost uncooled infrared microbolometer detector in standard CMOS technology
Tezcan, DS; Eminoglu, S; Akın, Tayfun (Institute of Electrical and Electronics Engineers (IEEE), 2003-02-01)
This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 mum CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electrochemical etch-stop technique in TMAH. Since this approach does not require any lithography or infrared sensitive material deposition after CMOS fabrication, the detector cost is almost equal to the CMOS chip co...
A second harmonic based resonance characterization method for MEMS electrostatic resonators
Aydin, EREN; GOKCE, Furkan; Kangul, MUSTAFA; ZORLU, Ozge; Külah, Haluk (Elsevier BV, 2018-05-01)
This paper presents a novel read-out approach both for eliminating parasitic feedthrough current and for enhancing the quality-factor (Q) of the resonating system at the same time. A new resonance characterization method based on sensing second harmonic component of the resonators was developed. Utilizing this method, the feedthrough current was eliminated and the signal-to-background ratio was increased from 0.9 dB to 35.5 dB. Furthermore, the Q of the resonating system was improved by 65% experimentally. ...
High mobility, low voltage operating C-60 based n-type organic field effect transistors
Schwabegger, G.; Ullah, Mujeeb; Irimia-Vladu, M.; Baumgartner, M.; Kanbur, Y.; Ahmed, R.; Stadler, P.; Bauer, S.; Sariciftci, N. S.; Sitter, H. (Elsevier BV, 2011-10-01)
We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude)...
Custom integrated circuit design for ultrasonic therapeutic CMUT array
Maadi, Mohammad; Bayram, Barış (Springer Science and Business Media LLC, 2015-04-01)
This paper presents the design of a highly flexible and programmable transmit beam-former ASIC using a high voltage (HV) 0.35 mu m CMOS technology to be flip-chip bonded to a 4 x 4 CMUT array for ultrasound therapeutic applications. However, proposed IC can be used as a transmitter circuitry in color Doppler 3D imaging applications. In our proposed chip, each CMUT element is provided by an 8-bit shift register, an 8-bit comparator, a one-shot circuit with adjustable pulse width, a programmable pulse train g...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Eminoglu, D. Tezcan, M. Tanrikulu, and T. Akın, “Low-cost uncooled infrared detectors in CMOS process,”
SENSORS AND ACTUATORS A-PHYSICAL
, pp. 102–113, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46196.