The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices

Yildiz, Dilber E.
APAYDIN, Dogukan H.
KAYA, Emine
Altindal, Semsettin
Çırpan, Ali
Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at room temperature. The forward and reverse C-V and G/w-V measurements were carried out in the frequency range of 10kHz-1MHz. The electrical parameters, barrier height (phi Bo ) and ideality factor (n) obtained from the forward bias LnI-V plot were found as 0.711eV and 3.8, respectively. In addition, the series resistance (Rs ) was obtained using Norde and Cheung's methods; Rs were found as 19.052k and 19.267k, respectively. The experimental C-V and G/w-V characteristics of these structures at various gate biases show fairly large frequency dispersion especially at low frequencies and applied voltage due to interface states (Nss) in equilibrium with the conjugated copolymer, interfacial polymer and Rs . These observations indicate that at low frequencies, the charges at interface states can easily follow an AC signal and yield an excess capacitance and conductance. On the other hand, the values of Nss were determined using high-low frequency capacitance (CLF -CHF ) method and Nss are of order 1011 eV-1 cm2 which is closer to the values obtained by Hill-Coleman method. Experimental results show that both Nss and Rs values should be taken into account in determining frequency and voltage dependent I-V, C-V and G/w-V characteristics for an organic structure.