THE ADVANCED MEMS (aMEMS) PROCESS FOR FABRICATING WAFER LEVEL VACUUM PACKAGED SOI-MEMS DEVICES WITH EMBEDDED VERTICAL FEEDTHROUGHS

2015-06-25
Torunbalci, M. M.
Alper, S. E.
Akın, Tayfun
This paper presents a novel, inherently simple and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where an SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a glass cap wafer is used for hermetic encapsulation and routing metallization. Glass-to-silicon anodically bonded seals yield a very stable cavity pressure of 150 mTorr after 15 days. The shear strength of the fabricated packages is above 7 MPa. Temperature cycling and ultra-high temperature shock tests results in no degradation in the hermeticity of the packaged chips.
18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

Suggestions

A Method of Fabricating Vacuum Packages with Vertical Feedthroughs in a Wafer Level Anodic Bonding Process
Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2014-09-10)
This paper presents a new method for wafer level vacuum packaging of MEMS devices using anodic bonding together with vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any sealing material or any complex via-refill or trench-refill vertical feedthrough steps. The packaging yield is experimentally verified to be above 95%, and the cavity pressure is characterized to be as low as 1 mTorr with the help of a thin-film getter. The shear strength of several packages is measured to be above...
Advanced MEMS Process for Wafer Level Hermetic Encapsulation of MEMS Devices Using SOI Cap Wafers With Vertical Feedthroughs
Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2015-06-01)
This paper reports a novel and inherently simple fabrication process, so-called advanced MEMS (aMEMS) process, that is developed for high-yield and reliable manufacturing of wafer-level hermetic encapsulated MEMS devices. The process enables lead transfer using vertical feedthroughs formed on an Silicon-On-Insulator (SOI) wafer without requiring any complex via-refill or trench-refill processes. It requires only seven masks to fabricate the hermetically capped sensors with an experimentally verified process...
A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process
Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (IOP Publishing, 2015-12-01)
This paper presents a novel, inherently simple, and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where a single SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a single glass cap wafer is used for hermetic encapsulation and routing metallization. Hermetic encapsulation can be achieved either with the silicon-glass anodic or Au-Si eutectic bonding techniques. The dies sealed with anodic and Au-Si eutectic bonding provide a...
Wafer level hermetic sealing of MEMS devices with vertical feedthroughs using anodic bonding
Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2015-04-01)
This paper presents a new method for wafer-level hermetic packaging of MEMS devices using a relatively low temperature anodic bonding technique applied to the recently developed advanced MEMS (aMEMS) process. The aMEMS process uses vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any complex via-refill or trench-refill steps while forming the vertical feedthroughs. The hermetic sealing process is achieved at 350 degrees C by using an anodic bonding potential of 600 V. The bonding p...
An all-silicon process platfom for wafer-level vacuum packaged MEMS devices
Torunbalci, Mustafa Mert; Gavcar, Hasan Dogan; Yesil, Ferhat; Alper, Said Emre; Akın, Tayfun (2021-01-01)
This paper introduces a novel, inherently simple, and all-silicon wafer-level fabrication and hermetic packaging method developed for MEMS devices. The proposed method uses two separate SOI wafers to form highly-doped through-silicon vias (TSVs) and suspended MEMS structures, respectively. These SOI wafers are then bonded by Au-Si eutectic bonding at 400°C, achieving hermetic sealing and signal transfer without requiring any complex via or trench refill process steps. The package vacuum is measured u...
Citation Formats
M. M. Torunbalci, S. E. Alper, and T. Akın, “THE ADVANCED MEMS (aMEMS) PROCESS FOR FABRICATING WAFER LEVEL VACUUM PACKAGED SOI-MEMS DEVICES WITH EMBEDDED VERTICAL FEEDTHROUGHS,” presented at the 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Anchorage, AK, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53308.