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THE ADVANCED MEMS (aMEMS) PROCESS FOR FABRICATING WAFER LEVEL VACUUM PACKAGED SOI-MEMS DEVICES WITH EMBEDDED VERTICAL FEEDTHROUGHS
Date
2015-06-25
Author
Torunbalci, M. M.
Alper, S. E.
Akın, Tayfun
Metadata
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This paper presents a novel, inherently simple and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where an SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a glass cap wafer is used for hermetic encapsulation and routing metallization. Glass-to-silicon anodically bonded seals yield a very stable cavity pressure of 150 mTorr after 15 days. The shear strength of the fabricated packages is above 7 MPa. Temperature cycling and ultra-high temperature shock tests results in no degradation in the hermeticity of the packaged chips.
Subject Keywords
Advanced MEMS (aMEMS) process
,
Wafer level hermetic encapsulation
,
Vertical feedthroughs
,
Anodic bonding
URI
https://hdl.handle.net/11511/53308
Conference Name
18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)
Collections
Department of Electrical and Electronics Engineering, Conference / Seminar
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Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2014-09-10)
This paper presents a new method for wafer level vacuum packaging of MEMS devices using anodic bonding together with vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any sealing material or any complex via-refill or trench-refill vertical feedthrough steps. The packaging yield is experimentally verified to be above 95%, and the cavity pressure is characterized to be as low as 1 mTorr with the help of a thin-film getter. The shear strength of several packages is measured to be above...
Advanced MEMS Process for Wafer Level Hermetic Encapsulation of MEMS Devices Using SOI Cap Wafers With Vertical Feedthroughs
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This paper presents a new method for wafer-level hermetic packaging of MEMS devices using a relatively low temperature anodic bonding technique applied to the recently developed advanced MEMS (aMEMS) process. The aMEMS process uses vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any complex via-refill or trench-refill steps while forming the vertical feedthroughs. The hermetic sealing process is achieved at 350 degrees C by using an anodic bonding potential of 600 V. The bonding p...
An all-silicon process platfom for wafer-level vacuum packaged MEMS devices
Torunbalci, Mustafa Mert; Gavcar, Hasan Dogan; Yesil, Ferhat; Alper, Said Emre; Akın, Tayfun (2021-01-01)
This paper introduces a novel, inherently simple, and all-silicon wafer-level fabrication and hermetic packaging method developed for MEMS devices. The proposed method uses two separate SOI wafers to form highly-doped through-silicon vias (TSVs) and suspended MEMS structures, respectively. These SOI wafers are then bonded by Au-Si eutectic bonding at 400°C, achieving hermetic sealing and signal transfer without requiring any complex via or trench refill process steps. The package vacuum is measured u...
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M. M. Torunbalci, S. E. Alper, and T. Akın, “THE ADVANCED MEMS (aMEMS) PROCESS FOR FABRICATING WAFER LEVEL VACUUM PACKAGED SOI-MEMS DEVICES WITH EMBEDDED VERTICAL FEEDTHROUGHS,” presented at the 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Anchorage, AK, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53308.