Date

2005

Author

Aşıcı, Burak

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This thesis reports the fabrication and characterization of long wavelength infrared mercury cadmium telluride (Hg1-xCdxTe) photodiodes and 128x128 focal plane arrays grown on lattice matched cadmium zinc telluride (Cd1-yZnyTe) substrates by metal organic vapor phase epitaxy (MOVPE). The dark current modeling of 33x33 mm2 Hg1-xCdxTe photodiodes has shown the dark current is dominated by trap assisted tunneling under small reverse bias voltages typically used to bias these detectors. The dominant dark current mechanisms under high reverse bias and low forward bias are bandاtoاband tunneling and generationاrecombination, respectively. The photodiodes have yielded a peak 77 K detectivity of 3.2x1010 cm?Hz/W with a cut-off wavelength (50%) of 10.92 mm. It has also been found that the 1/f noise current of the detectors at 1 Hz is related to the trap-assisted tunneling current through the empirical relation in=?TAT(ITAT)β with ?TAT=7.0 x 10-5 and β=0.65. In the course of the focal plane array (FPA) fabrication process development work, ohmic contact formation on p-type Hg1-xCdxTe and mesa wet etch were studied in detail. Contacts with chromium, gold, platinum and copper on p-type Hg1-xCdxTe resulted in bad ohmic contacts, which did not seem to improve with annealing. On the other hand a HgTe cap layer on p-type Hg1-xCdxTe resulted in good ohmic contact with acceptably low resistance. Among the etchants studied for mesa etching of the diode structures, Br2/HBr solution yielded the best performance. After developing all of the steps of FPA processing, 128x128 Hg1-xCdxTe FPAs were successfully fabricated and tested in a thermal imager. While thermal imaging was performed with the FPAs, high nonuniformity of the material and low R0A product of the pixels did not allow high sensitivity imaging.

Subject Keywords

Photoelectronic devices.

URI

http://etd.lib.metu.edu.tr/upload/3/12606449/index.pdf
https://hdl.handle.net/11511/15468

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Graduate School of Natural and Applied Sciences, Thesis