Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend

2020-09-01
Yildiz, D. E.
Gullu, H. H.
Toppare, Levent Kamil
Çırpan, Ali
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) as a partner of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Two-order of magnitude rectification ratio was achieved, and the temperature-dependent values of saturation current, zero-bias barrier height, and ideality factor were extracted according to the thermionic emission model. The temperature responses of these diode parameters showed an existence of inhomogeneity in the barrier height formation. As a result, the observed non-ideal behavior was explained by Gaussian distribution of barrier height where low-barrier regions are effective in the forward biased conduction mechanism at low temperatures. Together with this analysis, series resistances were evaluated using Cheung's functions and also density of interface states were investigated. On the other hand, reverse biased current flow was found under the dominant effect of Poole-Frenkel effects associated with these interfacial traps. The reverse current conduction mechanism was detailed by calculating characteristic field-lowering coefficients and barrier height values in the emission process from the trapped state in the range of temperatures of interest.
Journal of Materials Science: Materials in Electronics

Suggestions

Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-08-01)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode
Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01)
The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon
GÜLNAHAR, MURAT; Nasser, Hisham; Salimi, Arghavan; Turan, Raşit (Springer Science and Business Media LLC, 2020-11-01)
In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculate...
Characterization of chiral metamaterial sensor with high sensitivity
Dalgac, Sekip; BAKIR, MEHMET; KARADAĞ, FARUK; ÜNAL, EMİN; KARAASLAN, MUHARREM; Sabah, Cumali (Elsevier BV, 2020-02-01)
In this study, a chiral metamaterial sensor applications are created by placing asymmetrically two meander line front and back side of the substrate layer. Characterization of the dielectric constant, thickness and loss tangent have been performed both in simulation and experimental methods. Different Arlon type materials used for showing the effects of dielectric constant on transmission coefficient. Obtained bandwidths for characterization are greater than the similar studies which verifyies increased sen...
Realization of polarization-angle-independent fishnet-based waveguide metamaterial comprised of octagon shaped resonators with sensor and absorber applications
Sabah, Cumali (Springer Science and Business Media LLC, 2016-05-01)
A new fishnet-based waveguide metamaterial structure for the microwave region is introduced and investigated both numerically and experimentally. The proposed model is designed and fabricated on both sides of the substrate and exhibits strong metamaterial behavior (such as negative material parameters: i.e. negative permittivity, negative permeability, and negative index of refraction) at the resonance. Only one single slab is used in the simulation and experiment which provides a reduction in the number of...
Citation Formats
D. E. Yildiz, H. H. Gullu, L. K. Toppare, and A. Çırpan, “Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend,” Journal of Materials Science: Materials in Electronics, pp. 15233–15242, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43305.