A NOVEL FABRICATION AND WAFER LEVEL HERMETIC SEALING METHOD FOR SOI-MEMS DEVICES USING SOI CAP WAFERS

Date

2015-01-22

Author

Torunbalci, Mustafa Mert
Alper, Said Emre
Akın, Tayfun

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This paper presents a novel and inherently simple all-silicon fabrication and hermetic packaging method developed for SOI-MEMS devices, enabling lead transfer using vertical feedthroughs formed on an SOI cap wafer. The processes of the SOI cap wafer and the SOI-MEMS wafer require a total of five inherently-simple mask steps, providing a combined process and packaging yield as high as 95%. The hermetic encapsulation is achieved by Au-Si eutectic bonding at 400 degrees C. The package pressure is measured as 1 Torr without any getter activation, and the package is proved to remain hermetic even after various temperature cycling tests. The shear strength of the fabricated chips is measured to be above 15 MPa, indicating a mechanically strong bonding.

URI

https://hdl.handle.net/11511/53330

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Department of Electrical and Electronics Engineering, Conference / Seminar

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A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (IOP Publishing, 2015-12-01) This paper presents a novel, inherently simple, and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where a single SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a single glass cap wafer is used for hermetic encapsulation and routing metallization. Hermetic encapsulation can be achieved either with the silicon-glass anodic or Au-Si eutectic bonding techniques. The dies sealed with anodic and Au-Si eutectic bonding provide a...
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Citation Formats

M. M. Torunbalci, S. E. Alper, and T. Akın, “A NOVEL FABRICATION AND WAFER LEVEL HERMETIC SEALING METHOD FOR SOI-MEMS DEVICES USING SOI CAP WAFERS,” 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53330.